SIGMA-C Introduces Simulation Software for E-Beam Lithography; Enables Cost-Effective Process Optimization for Mask Making and Direct-Write on Wafers.Business Editors/High-Tech Writers MUNICH, Germany--(BUSINESS WIRE)--Jan. 27, 2004 SIGMA-C GmbH, a leading provider of applied simulation software Simulation software is based on the process of imitating a real phenomenon with a set of mathematical formulas. It is, essentially, a program that allows the user to observe an operation through simulation without actually running the program. for the semiconductor industry, has recently introduced SELID version 3.3, advanced software that models the entire e-beam lithography process in three dimensions. By using SELID, photomask producers and semiconductor manufacturers can develop and optimize processes for reticle ret·i·cle n. A grid or pattern placed in the eyepiece of an optical instrument, used to establish scale or position. [Latin r writing, direct-write on wafers and other applications of e-beam lithography. Compared to experimental approaches, SELID can reduce cycle times and development costs because users can run hundreds of wafers or masks overnight, virtually, without using production resources. "As in optical lithography, e-beam lithography is facing a multitude of issues, ranging from pattern printability and design verification to the optimization of tools and processes. SELID is adept at helping users to predict and resolve these issues by generating highly accurate simulations," said Ulrich Hofmann, director of technical marketing, SIGMA-C. Similar to SIGMA-C's optical-lithography simulation software, SELID offers process-oriented flows that allow users to specify process steps sequentially. A typical e-beam process sequence includes: -- Substrate stack definition -- E-beam exposure -- Post-exposure bake -- Resist development SELID provides fast, comprehensive modeling techniques, such as the Monte Carlo method Monte Carlo method Statistical method of approximating the solution of complex physical or mathematical systems. The method was adopted and improved by John von Neumann and Stanislaw Ulam for simulations of the atomic bomb during the Manhattan Project. for simulating e-beam scattering, and it can model the use of advanced chemically amplified resists in processing. The software has powerful, automated analysis tools that allow the variation of all parameters. Additionally, SELID enables users to view the results and determine the efficacy of different process steps by providing energy density, and latent and resist images. SELID is compatible with other SIGMA-C software products, including FIRM (for setting simulation parameters), PWA PWA abbr. 1. person with AIDS 2. Public Works Administration (process window analysis), CAPROX (data preparation and proximity effect Proximity effect may refer to:
About SIGMA-C SIGMA-C is a leading provider of simulation software that allows semiconductor manufacturers and their suppliers to develop and optimize process sequences for optical lithography, e-beam lithography and next-generation lithography Next-Generation Lithography (NGL) is a term used in integrated circuit manufacturing to describe the lithography technologies slated to replace photolithography beyond the 32 nm node. (NGL NGL - A dialect of IGL. ) technologies. Applied in actual production, these processes can significantly improve product yields, cycle times and equipment utilization. SIGMA-C's product portfolio also includes production tools for full-chip data preparation, data analysis and optical proximity correction Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The two most common applications for OPC are linewidth differences between features in regions of different density (e. . Founded in 1987, SIGMA-C is headquartered in Munich, Germany, and has a U.S. subsidiary in Campbell, Calif., and an office in Seoul, South Korea. The company Web site is located at www.sigma-c.com. |
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