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SANYO DEVELOPS 150 mW HIGH-POWER SEMICONDUCTOR LASER

 SANYO DEVELOPS 150 mW HIGH-POWER SEMICONDUCTOR LASER
 ALLENDALE, N.J., Jan. 21 /PRNewswire/ -- Sanyo Electric Co. Ltd., a


leading manufacturer of semiconductor laser products, announced today that it has developed a series of reliable, high-powered 150 mW laser diodes which oscillate at wavelengths between 800 and 870 nanometers. The high powered lasers will enhance processing speeds in erasable optical disc memories and image processing equipment, and can be used in satellite communication. In addition, they can be used as pumping sources for blue laser light generation when used with a Second Harmonic Generation (SHG) (see Note below) device.
 This development overcomes previous hurdles to effective blue laser generation. High-output power is generated to compensate for inherent power loss in the second harmonic generation process and an 860 nm lasing wavelength can be produced for phase-matching conditions at room temperature when using a typical KNbO3 second harmonic device.
 These aluminum gallium arsenide double heterostructure lasers are fabricated using a precision two-step liquid phase epitaxy process. "Unlike some other recently announced high power laser diodes, these new lasers are produced using a relatively uncomplicated, proven process," said Keiichi Yodoshi of Sanyo's Semiconductor Research Center. "Further, our new laser has exceptional reliability and is stable in both the transverse and longitudinal mode."
 Reliable high power output was achieved by establishing the p-cladding layer thickness at 0.7 microns, increasing the lasing cavity length to 900 microns and improving the flatness and homogeneity of the crystalline active layer. These adjustments suppress temperature rise, helping prevent degradation or catastrophic damage.
 Stable continuous wave operation at 150 mW has been confirmed for more than 5,000 hours at room temperature and in excess of 2,000 hours at 50 degrees Celsius. Beam astigmatism is less than 10 microns at 60 mW or greater, allowing excellent optical coupling with SHG devices and tight beam spot focusing in conventional applications. Built-in PIN photodiodes for light output monitoring are incorporated in the laser diode assembly.
 Sanyo will initially produce three 150 mW laser diode models operating at 810, 830, and 860 nm although any wavelength from 800 to 870 nm can be produced as required. Sample quantities of the new lasers will be available in the first quarter of 1992, with production in volume expected by mid-1992.
 Sanyo Semiconductor Corporation, headquartered in Allendale, is Sanyo Electric Co., Ltd's marketing arm for semiconductors and electronic components in North America.
 NOTE: An SHG device doubles the frequency of an infrared spectrum laser when the light from the laser passes through a special crystal in the device, halving the oscillating wavelength of the beam and moving it from infrared to visible blue on the color spectrum. A blue laser's beam is only half the diameter of the originating infrared beam and illuminates only one-quarter of the area on a receptor surface -- quadrupling the recording density on a laser disc and significantly improving resolution in laser image processing applications.
 Blue spectrum lasers with sufficient power are critical to information intensive applications such as long playing high definition moving image video storage as well as for full color image processing.
 -0- 1/21/92
 /NOTE TO EDITORS: A detailed paper regarding this development will be presented at the International Symposium on Lasers, Sensors and Spectroscopy sponsored by the Society of Photo-Optical Instrumentation Engineers (SPIE) in Los Angeles today./
 /CONTACT: Karen Schneider of Sanyo, 201-825-8080, ext. 29/ CO: Sanyo Electric Co., Ltd. ST: New Jersey, California IN: CPR SU: PDT


GK-TS -- NY049 -- 1767 01/21/92 11:20 EST
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Date:Jan 21, 1992
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