Rhombic Receives Results On Silicon Carbide Purification.

VANCOUVER, BC--(BUSINESS WIRE)--August 17, 199--

Rhombic Corporation (OTCBB: NUKE) is pleased to announce that it has received the first Secondary Ion Mass Spectrometry (SIMS) purification reports in reference to the purification of silicon carbide (SiC) wafers. According to Dr. Mark Prelas of the University of Missouri, these reports are promising and have demonstrated the reduction of impurities in all three categories for the cleansing of natural contaminates through the use of Rhombic's patented "Forced Diffusion" process. Silicon carbide is a major factor in high temperature, high speed electronics and LEDs.

Tests are continuing on gallium nitride (GaN) wafers for the cleansing of natural contaminates. Gallium nitride is a blue laser generator. Both materials are light emitting diodes that can be modified to produce photovoltaic cells that assist in the conversion of ultraviolet light to electricity.

These tests are being performed on silicon carbide and gallium nitrate wafers, which are widely used by the semiconductor and wafer industry. Successful cleansing of natural contaminates from the gallium nitride (GaN) and silicon carbide (SiC) wafers will result in longer lifespan wafers with greater effectiveness.

Both types of wafers are being treated in preparation for distribution in commercial quantities. Rhombic's research and marketing focus is to penetrate the existing $7 billion silicon wafer and electronics market with a purified wafer line.

According to the 1999 Semiconductor and Wafer Industry Report what is needed most in industry are wafers of larger size and purity. The report also states that silicon carbide is poised to take over large segments in high temperature and high power electronics.

The company's "Forced Diffusion" process can be used to add to or to take out impurities from diamond, silicon carbide, gallium nitride, and other special materials to modify the optical, chemical, electrical and mechanical properties of those materials and can be used for all wide-band gap semiconductor materials.

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