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Ramtron Shatters Limited Endurance Myth By Introducing the World's First Unlimited Read/Write FRAM Product; 256Kb 3-Volt FRAM Breaks Ferroelectric Endurance Barrier.


Business Editors/High-Tech Writers

COLORADO SPRINGS Colorado Springs, city (1990 pop. 281,140), seat of El Paso co., central Colo., on Monument and Fountain creeks, at the foot of Pikes Peak; inc. 1886. It is a year-round resort and a booming military, technological, and commercial city. , Colo.--(BUSINESS WIRE)--March 27, 2001

Ramtron International Ramtron International is the main vendor of FRAM chips.

creator of ESDRAM: Ramtron Ships World's Fastest Synchronous DRAM
  • "frequently used in place of fast SRAM in high performance embedded systems such as communications, DSP, and computer boards."
 Corporation (Nasdaq:RMTR RMTR Redesigned Missile Tracking Radar ), a leading developer of specialty semiconductor memory products, today introduced the world's first nonvolatile memory See non-volatile memory.  to feature unlimited endurance. The 256-kilobit FM18L08 is a 3-volt FRAM (1) (Ferroelectric RAM) See FeRAM.

(2) (Ferromagnetic RAM) A non-volatile memory that records microscopic bits on a magnetic surface. See MRAM.

FRAM - Ferroelectric Random Access Memory
 product, which offers an unlimited number of read and write cycles -- a feature never before available in commercial nonvolatile memories.

Accelerated characterization of the FM18L08's underlying FRAM technology guarantees an endurance specification of at least 10 quadrillion One thousand times one trillion, which is 1, followed by 15 zeros, or 10 to the 15th power. See space/time.  (10 to the 16th power) read/write cycles. Each memory location within the FM18L08 could be accessed one million times per second for more than three hundred years without loss of data retention. Ramtron's increased endurance specification eliminates the endurance gap between nonvolatile and volatile memory, thereby removing a critical barrier in FRAM's ability to replace ubiquitous SRAM See static RAM.

SRAM - static random-access memory
 and DRAM memories.

The new development is the result of a highly collaborative effort between Ramtron's Advanced Materials Group and one of its foundry partners. "Ramtron's current ferroelectric Refers to a material that functions similarly to a ferromagnetic material in that it can be polarized into two states. Ferroelectric devices generally do not have any "ferrous" (iron) in them. See FeRAM and ferroelectric capacitor.  material is a tailor-made compound, having as much in common with unrefined PZT PZT Lead Zirconate Titanate (piezoelectric ceramic material)
PZT Piezoelectric Transducer
PZT Photographic Zenith Tube
PZT Point Zone Telephone
 as stainless steel stainless steel: see steel.
stainless steel

Any of a family of alloy steels usually containing 10–30% chromium. The presence of chromium, together with low carbon content, gives remarkable resistance to corrosion and heat.
 has with iron," said Dr. Domokos Hadnagy, vice president of quality and reliability at Ramtron. "We have crafted the ferroelectric material, the electrode system, and the deposition process to achieve a low-voltage, unlimited access memory. This development dispels previous myths about FRAM's and refined PZT's inability to achieve unlimited endurance."

"FRAM technology is building momentum as a mainstream memory offering," said Mike Alwais, director of marketing for Ramtron. "After reaching critical development milestones, including 3-volt operation in January, and unlimited read/write access today, there are few remaining applications that can not take advantage of FRAM technology. Today's innovation opens the entire low-power SRAM market to FRAM."

Semico Research, a leading semiconductor industry research firm, reported that the low-power SRAM market was valued at over $3 billion last year.

FRAM operates like a random access memory but also provides nonvolatile data storage. Data nonvolatility is achieved by applying an electric field to ferroelectric crystals within the memory cell. As the field is applied, central atoms within the crystals move in the direction of the field to store digital "1s" and "0s". When the electric field is removed, the atom remains in position without power. Unlike other nonvolatile memories, there is no physical barrier to breakdown and wear out.

Applications:

The FM18L08 is an ideal replacement for battery-backed SRAM or nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. FM18L08 eliminates the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. With its unlimited access cycles, it provides any combination of volatile and nonvolatile storage, replacing both SRAM and EEPROM (Electrically Erasable Programmable ROM) A rewritable memory chip that holds its content without power. Although EEPROMs spawned flash memory, EEPROMs are byte addressable at the write level, whereas flash chips must erase a block of bytes before rewriting.  in the end system with no disadvantages. End applications include office equipment: laser printers, business telephones, and photocopiers; industrial equipment: including all types of process controls and metering; and telecom/networking configuration storage and network status information. Other applications include those that collect and store data or configuration, and portable applications, which demand optimal space and power consumption.

Product Features:

The FM18L08 is a 32Kx8 nonvolatile RAM with industry standard SRAM and EEPROM pin out. It offers 1E16 read/write cycles per address, with full data retention. FM18L08 operates from 2.7V to 3.6V and draws 15-milliamps active current at 70 ns access time. The FM18L08 offers 10 years of data retention and is rated over the industrial temperature range of -40 degrees C to +85 degrees C.

Pricing and Availability:

Samples of FM18L08 are available immediately in 28-pin SOP and DIP, with pricing starting at $4.50 each in 10K quantities.

About Ramtron

Ramtron's patented FRAM memories are a new generation of semiconductor memory that combine high-performance and low-power operation with the ability to store data in the absence of power. Due to the product's unique advantages, FRAM memories are expected to revolutionize a variety of electronic consumer and industrial products. The company also develops and markets ultra-high-performance EDRAM (1) (Enhanced DRAM) A high-speed DRAM chip developed by Ramtron International Corporation, Colorado Springs, CO. It allowed overlap of a read at the trailing end of a write operation to obtain its speed.  and ESDRAM ESDRAM Enhanced Synchronous Dynamic Random Access Memory
ESDRAM Enhanced Synchronous Dynamic Ram
 memory products through its subsidiary, Enhanced Memory Systems, Inc.

Except for historical information, the statements preceding contain forward-looking statements that involve risks and uncertainties. Investors are cautioned that such statements are only predictions and the actual events or results may differ materially. These forward-looking statements speak only as of this date. The company undertakes no obligation to publicly release the results of any revisions to the forward-looking statements made today to reflect events or circumstances after today, or to reflect the occurrence of unanticipated events.

For more information about Ramtron and its products, contact: Ramtron International Corporation, 1850 Ramtron Drive, Colorado Springs, Colorado The City of Colorado Springs is the second most populous city (after Denver) in the state of Colorado and the 48th most populous city in the United States.[4] The city is the county seat of El Paso County. , USA, 80921. Telephone is 719/481-7000 or 800/545-FRAM (800/545-3726); Fax is 719/481-7058; E-mail address is info@ramtron.com. Homepage is www.ramtron.com.
COPYRIGHT 2001 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2001, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Date:Mar 27, 2001
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