RFMD Announces Design Wins for Wireless Infrastructure Products.

New Low Noise Amplifiers Target Base Station, WLAN and Point-To-Point Radios For Multiple Air Standards

HONOLULU -- RF Micro Devices, Inc. (NASDAQ:RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the availability of the RF386X family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs). RFMD's new pHEMT LNAs offer capabilities from 700MHz to 3800MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions. The new broadband LNAs are ideally suited for wireless networks, including cellular, WLAN and WiMAX infrastructure.

Jeff Shealy, vice president of RFMD's infrastructure product group, said, "Our new RF386X family of LNAs covers multiple octaves in frequency while delivering excellent noise performance and linearity, resulting in a single component which delivers enhanced signal quality to the customer for multiple radio applications. Our competitive broadband solutions have resulted in design wins worldwide for applications across multiple growth markets."

The RF386X family of LNAs is designed for first stage low noise and linear driver amplification targeting CDMA, PCS, DCS, UMTS, WLAN and WiMAX applications. The LNAs are offered in a variety of configurations - single stage, dual stage and dual channel, and each LNA is internally matched, giving network designers maximum flexibility with minimal external biasing, thereby simplifying design requirements and accelerating time-to-market. Each RF386X LNA is contained in a low-cost, industry-standard QFN package.

RFMD is a leading supplier of small signal devices, such as LNAs, and has shipped greater than 400 million small signal devices to date, primarily into the handset industry. RFMD is leveraging its existing core competencies, including design expertise, compound semiconductor process technology, packaging technology, and manufacturing scale, as its new LNAs and other infrastructure products ramp into multiple growth markets.

RFMD is showcasing its industry-leading product portfolio of cellular front end solutions and wireless infrastructure products at the IEEE MTT-S International Microwave Symposium 2007, June 5-7, at the Honolulu Convention Center in Honolulu, Hawaii, in Booth 801.

About RFMD: RF Micro Devices, Inc. (NASDAQ: RFMD) is a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications. RFMD's power amplifiers, transmit modules, cellular transceivers and system-on-chip (SoC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in current- and next-generation mobile handsets, cellular base stations, wireless local area networks (WLANs) and global positioning systems (GPS). Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier enabling the world's leading mobile device manufacturers to deliver advanced wireless capabilities that satisfy current and future market demands.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.

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