RFMD(R) Announces Availability of GaAs pHEMT RF Switches.

Newly-Introduced RF1200 And RF1450 RF Switches Leverage RFMD's Industry-Leading GaAs Manufacturing Capability And Expand RFMD's Total Addressable Market In Analog Components

LONG BEACH, Calif. -- RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it will showcase its newest RF switches - the RF1200 and RF1450 - at the IEEE Radio and Wireless conference in Long Beach, California, January 9-11 in booth 513.

The RF1200 and RF1450 utilize RFMD's industry-leading GaAs manufacturing capability and leverage the switch technology developed for use in RFMD's transmit modules. These high performance switches enable front-end applications in multiple market segments, including multi-mode GSM / WCDMA cellular handsets, antenna tuners, IEEE802.11a/b/g WLAN and cellular infrastructure.

"RFMD's entry into the RF switch market segment expands the Company's total addressable market while complementing our growing product portfolio of industry-leading cellular transmit modules," said Bob Bruggeworth, president and CEO of RFMD. "Our first two RF switch product offerings - the RF1200 and RF1450 - enable complex front-end applications of feature-rich multi-mode handsets, improve overall RF system performance and help enable new architectures. We expect to grow revenue in the RF switch market as we introduce new products and leverage our growing leadership position in cellular RF."

The RF1200 is a single-pole double-throw (SPDT) high-power switch that meets all linearity requirements for WCDMA and features low insertion loss, low control voltage and very good harmonic characteristics. It is fabricated with 0.5om GaAs pHEMT process and is packaged in a very compact 2X2mm, 6-pin, leadless QFN package.

The RF1450 is a single-pole four-throw (SP4T) high-power switch specifically designed to provide superior linearity performance for multimode WCDMA applications. The RF1450 includes integrated decoding logic, allowing just two control lines needed for switch control. It is packaged in a compact 3X3X0.6mm, 16-pin, leadless QFN package.

RF1200 features include:             <
RF1450 features include:
- Low insertion loss 0.35dB at 1GHz  <
- Low insertion loss 0.60dB max
- High isolation 25dB at 1GHz        <
- High Isolation 15 dB at 2.2 GHz
- Low control voltage 2.6V to 5.0V   <
- Low control voltage 2.6V to 5.0V
- Harmonics H2: -80dBc at 1GHz       <
- Harmonics: -75dBc @ 1 GHz
- GaAs pHEMT process                 <
- GaAs pHEMT process

The RFMD RF1200 and RF1450 are currently in production to initial customers at a price of $0.59/10K for the RF1200 and a price of $1.19/10K for the RF1450.

About RFMD: RF Micro Devices, Inc. (NASDAQ: RFMD) is a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications. RFMD's power amplifiers, transmit modules, cellular transceivers and system-on-chip (SoC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in current- and next-generation mobile handsets, cellular base stations, wireless local area networks (WLANs) and global positioning systems (GPS). Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier enabling the world's leading mobile device manufacturers to deliver advanced wireless capabilities that satisfy current and future market demands.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.

This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including variability in quarterly operating results, the rate of growth and development of wireless markets, risks associated with the operation of our wafer fabrication facilities, molecular beam epitaxy facility, assembly facility and test and tape and reel facilities, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, our ability to reduce costs and improve gross margins by implementing innovative technologies, our ability to bring new products to market, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited number of customers, and dependence on third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.

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