Phiar Corp. Announces DARPA Award to Fund Novel Metal-Insulator Transistor Development.

BOULDER, Colo. -- Phiar Corporation, the leader in metal-insulator electronic devices offering unprecedented price/performance, confirmed today that it has been awarded a Phase-II SBIR contract by the Defense Advanced Research Projects Agency (DARPA) in the amount of $1.4 million. The award was made through DARPA's Microsystems Technology Office.

"We are honored to be selected for this award to develop metal-insulator transistors; it clearly speaks to the strength of our team and technology," said Bob Goodman, Phiar's President and CEO. "This funding builds on the significant momentum we have gained with our cost-effective, high-performance diodes."

University of Colorado Chancellor, G. P. "Bud" Peterson, remarked, "This grant is an example of the innovation that is possible through collaboration between first-rate research institutions and the private sector. Phiar's technology has the promise to grow our IT economy while bolstering Homeland Security."

"DARPA's two previous contracts with Phiar were a boost for our diode development. We are thrilled to have even more DARPA support behind our transistor," said Goodman. "DARPA bet on Phiar early in our diode development, and it paid off: our diode technology is approaching commercialization now. We expect the same results with our transistor efforts."

When placed in a circuit, Phiar's transistors will operate much like semiconductor bipolar transistors. However, Phiar's designs are projected to eventually reach maximum frequencies of about 3 terahertz, which the company expects to offer at price-points similar to today's 3 gigahertz transistors. The transistor contains no semiconductor materials and makes use of voltage-controlled quantum tunneling to determine the flow of electrons.

Phiar is collaborating with the University of Colorado on the development of metal-insulator transistors. Peterson added, "CU is pleased to be a subcontractor for this grant and to work closely with Phiar's team again."

About Phiar Corporation

Phiar is developing low-cost, nano-scale devices that take performance beyond the physical limits of semiconductors. Phiar's metal-insulator technology can be integrated into supporting CMOS chip dies, or manufactured on a wide range of other substrates. Natively operating from DC to 3 THz, Phiar's technology is a compact, practical replacement for costly compound semiconductors in GHz applications and even cryogenic devices in the emerging THz field. Phiar is funded by Menlo Ventures. For more information, visit www.phiar.com.