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Peak Devices, Inc. Acquires Infineon's(R) Bipolar RF Transistor 'PTB' Series Product Line.


BOULDER, Colo. -- Peak Devices Inc., a manufacturer of Radio Frequency Transistors, has announced the acquisition of wafers, die, packages, lids and specialized assembly equipment, needed to continue to manufacture and support the "PTB PTB Physikalisch Technische Bundesanstalt (Germany)
PTB Partido Trabalhista Brasileiro (Brazilian Labor Party)
PTB Phosphotyrosine-Binding
PTB Powers That Be
PTB Power Tab
" series of bipolar RF transistors.

The product line covers a broad range of markets including: Television Broadcast, Cellular Radio, Satellite Communications, and Digital Audio Broadcast (DAB). The portfolio includes transistors producing from 1 watt to 220 watts of RF output power, operating from 420MHz to 2.2GHz.

"This acquisition is a great fit for Peak Devices, as we have just completed fabrication of our first state-of-the-art HF, VHF (Very High Frequency) The range of electromagnetic frequencies from 30 MHz to 300 MHz.  and UHF (Ultra High Frequency) The range of electromagnetic frequencies from 300 MHz to 3 GHz. In the U.S., analog television has used UHF channels 52 to 69 in the 700 MHz band.  silicon Bipolar wafers which have significantly better performance and ruggedness than legacy bipolar technologies. This perfectly complements the UHF-2GHz PTB Bipolar transistor line," commented CEO (1) (Chief Executive Officer) The highest individual in command of an organization. Typically the president of the company, the CEO reports to the Chairman of the Board.  William McCalpin

McCalpin continued: "The PTB series of RF transistors, our existing bipolar and VDMOS VDMOS Vertical Diffusion Metal-Oxide Semiconductor (MOSFET technology)
VDMOS Vertical Double Diffused Mos
 RF transistor portfolio, combined with our state-of-the-art LDMOS LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOS Lateral DMOS
LDMOS Lightly-Doped Drain Metal-Oxide Semiconductor
LDMOS Lateral Diffusion Mosfet
 technology, means that Peak Devices can support our customer base at every stage of their product life cycle, from their mature products based on older transistor technology to their new designs that require our state-of-the-art LDMOS technology. Our broad portfolio differentiates Peak from its competitors who actively obsolete older products, forcing their customer base to put valuable engineering resources into mature products."

Peak Devices designs, manufactures and markets a broad range of Bipolar, VDMOS, and LDMOS, Low Power and High Power RF discrete transistors for use in a variety of market segments, including Wireless, HF/VHF/UHF 2-Way Communications, FM Broadcast, Television Broadcast, Avionics, Radar, and Military. Peak specializes in extending the life of mature RF transistor product lines by designing and manufacturing drop-in replacement transistors for those no longer supported by other manufacturers as well as utilizing state-of-the-art technologies for under-supported markets.

Peak Devices is a privately held company privately held company

A firm whose shares are held within a relatively small circle of owners and are not traded publicly.
, headquartered in Boulder, Colorado.

For more information about Peak Devices and Peak Devices products, visit our Web site at www.peakdevices.com, or send email to info@peakdevices.com. To speak with us directly, call 720-406-1221.

Infineon is a registered trade mark of Infineon Technologies AG.
COPYRIGHT 2005 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2005, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Date:Sep 6, 2005
Words:347
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