Oki Electric Develops GaN-HEMT on Silicon Substrate with Record High Amplifying Characteristics.Tokyo, Japan, Oct 18, 2005 - (JCNN JCNN Japan Corporate News Network ) - Oki Electric Industry announced on October 17 that it has developed a power transistor with dramatically improved amplifying characteristics, in collaboration with the Research Center for Micro-Structure Devices at the Nagoya Institute of Technology The Nagoya Institute of Technology (名古屋工業大学 . Formed on a large diameter silicon substrate, the gallium nitride An alloy of gallium and nitrogen (GaN) that is used in semiconductor devices for lasers and LEDs, including blue lasers. Gallium nitride has the thermal and chemical stability required in laser applications. See gallium arsenide. high electron mobility transistor (GaN-HEMT) achieves a world record transconductance rating of 350mS/mm, a maximum oscillation frequency of 115GHz and a current gain cut off frequency of 56GHz, which are all comparable to figures achieved on conventional silicon carbide (SiC) substrates. Oki plans to increase the output of the GaN-HEMT with the aim of using it on 3G cellular base stations and WiMAX devices, and to launch commercial production in 2007. Source: JCN JCN Japan Corporate News JCN Journal of Cognitive Neuroscience JCN Journal of Cardiovascular Nursing JCN Journal of Christian Nursing JCN Job Control Number JCN Journal of Child Neurology JCN joint communications network (US DoD) http://www.japancorp.net Copyright [c] 2005 Japan Corporate News Network. All rights reserved. |
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