Obtain Detailed Information on the Physics of Semiconductor Devices.DUBLIN, Ireland -- Research and Markets (http://www.researchandmarkets.com/reports/c47581) has announced the addition of Physics of Semiconductor Devices, 3rd Edition to their offering. This classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar (1) See bipolar transmission. (2) One of two major categories of transistor; the other is "field effect transistor" (FET). Although the first transistors and first silicon chips were bipolar, most chips today are field effect transistors wired as CMOS logic, which , unipolar unipolar /uni·po·lar/ (u?ni-po´ler) 1. having a single pole or process, as a nerve cell. 2. pertaining to mood disorders in which only depressive episodes occur. , special microwave, and optoelectronic devices. It integrates nearly 1,000 references to important original research papers and review articles, and includes more than 650 high-quality technical illustrations and 25 tables of material parameters for device analysis. In this third edition, all major topics of contemporary interests will be either be added or expanded. It will include problems and examples, as well as a solutions manual. Introduction. Part I Semiconductor Physics. Chapter 1 - - Physics and Properties of Semiconductors-A Review. . Part II Device Building Blocks. Chapter 2 - p-n Junctions Noun 1. p-n junction - the junction between a p-type semiconductor and an n-type semiconductor; "a p-n junction has marked rectifying characteristics" tangency, contact - (electronics) a junction where things (as two electrical conductors) touch or are in physical . . Chapter 3 - Metal-Semiconductor Contacts. . Chapter 4 - Metal-Insulator-Semiconductor Capacitors.. Part III Transistors. Chapter 5 - Bipolar Transistors (electronics) bipolar transistor - A transistor made from a sandwich of n- and p-type semiconductor material: either npn or pnp. The middle section is known as the "base" and the other two as the "collector" and "emitter". . . Chapter 6 - MOSFETs. . . Chapter 7 - JFETs, MESFETs, and MODFETs. . Chapter 8 - Tunnel Devices. . Chapter 9 - IMPATT Diodes An IMPATT diode (IMPact ionization Avalanche Transit-Time) is a form of high power diode used in high-frequency electronics and microwave devices. They are typically made with silicon carbide owing to their high breakdown fields. . . Chapter 10 - Transferred-Electron and Real-Space-Transfer Devices. . Chapter 11 - Thyristors and Power Devices. . Chapter 12 - LEDs and Lasers. . . Chapter 13 - Photodetectors and Solar Cells solar cell, semiconductor devised to convert light to electric current. It is a specially constructed diode, usually made of silicon crystal. When light strikes the exposed active surface, it knocks electrons loose from their sites in the crystal. . . Chapter 14 - Sensors. . Appendixes. For more information visit http://www.researchandmarkets.com/reports/c47581 |
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