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ON Semiconductor Introduces Industry's First Common Mode Choke EMI Filter with Integrated ESD Protection for High-Speed Data Lines.

New Miniature Device Eliminates Common Mode Noise in LVDS-Class Interfaces Where High Bandwidth Prevents the Use of Traditional EMI Filters

PHOENIX -- ON Semiconductor (Nasdaq: ONNN), a leading global supplier of high-performance, energy-efficient, silicon solutions, today introduced the industry's first integrated common mode choke and electrostatic discharge (ESD) protection IC for high-speed data line applications.

The new NUC2401MN combines high bandwidth differential filtering, solid common mode stop band attenuation and world-class ESD protection. These combined features make this solution far superior to typical electromagnetic interference (EMI) filters and discrete alternatives while helping to significantly lower component count. Enabling designers to achieve superior filtering and protection while realizing space and cost savings and improving overall reliability, it is ideal for a wide variety of applications based on high-speed differential data lines including USB 2.0, IEEE1394, LVDS, MIPI and MDDI.

"ON Semiconductor has established a reputation as a leading provider in high-performance EMI filter products and the NUC2401 is our newest product to continue this trend," said Gary Straker, general manager of ON Semiconductor's protection and control product group. "This device is the first of many in a comprehensive portfolio that will help our customers in their efforts to integrate high bandwidth interfaces into handsets that will ultimately be capable of delivering the latest high bandwidth content from cellular service providers."

Integrating the equivalent of five discrete components into a DFN package measuring just 2.0 mm x 2.2 mm, the NUC2401MN combines common mode EMI filtering with ESD protection to O12 kilovolts (kV) - in accordance with the IEC61000-4-2 industry standard for contact discharge. Machine Model (MM) and Human Body Model (HBM) ESD ratings are 1.6 kV and 16 kV, respectively. The device is rated to MSL 1 and will operate at temperatures from -40 aeC to 85 aeC.

Because the NUC2401MN is an integrated solution, it helps reduce parasitic inductance, resulting in more ideal common mode filtering. The cutoff frequency for common mode noise reduction is 40 megahertz (MHz) and typical common mode impedance at 100 MHz and 500 MHz is 200 ohm and 500 ohm, respectively. The device also offers the industry's lowest maximum clamp voltage - 10 volts (V) at a peak current of 5 amperes (A) - to ensure superior ESD protection. Maximum peak pulse current rating is 19 A.

Package and Pricing

The NUC2401MN is offered in a compact 2.0 mm x 2.2 mm DFN8 package. Available now, it is priced at $0.533 USD per unit in 10,000-unit quantities.

For additional technical information, visit www.onsemi.com or contact Wes Reid at wes.reid@onsemi.com.

About ON Semiconductor

With its global logistics network and strong product portfolio, ON Semiconductor (Nasdaq: ONNN - News) is a preferred supplier of high-performance, energy-efficient, silicon solutions to customers in the power supply, automotive, communication, computer, consumer, medical, industrial, mobile phone, and military/aerospace markets. The company's broad portfolio includes power, analog, DSP, mixed-signal, advance logic, clock management, non-volatile memory and standard component devices. Global corporate headquarters are located in Phoenix, Arizona. The company operates a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit http://www.onsemi.com.

ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein.
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Publication:Business Wire
Date:May 27, 2009
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