Novel Transistor Architecture from Freescale Breaks Through CMOS Scaling Barriers; First Transistor to Include Planar and Vertical Thin Body Structures Unveiled at IEDM 2005.WASHINGTON -- Freescale Semiconductor Freescale Semiconductor, Inc. is an American semiconductor manufacturer. It was created by the divestiture of the Semiconductor Products Sector of Motorola in 2004. Freescale focuses their integrated circuit products on the automotive, embedded and communications markets. (NYSE NYSE See: New York Stock Exchange :FSL FSL - Formal Semantics Language. A language for compiler writing. ["A Formal Semantics for Computer Languages and its Application in a Compiler-Compiler", J.A. Feldman, CACM 9(1) (Jan 1966)]. [Sammet 1969, p. 641]. ) (NYSE:FSL.B) has demonstrated a breakthrough transistor that overcomes many of the design and manufacturing challenges associated with vertical multi-gate devices. The invention, called the Inverted inverted reverse in position, direction or order. inverted L block a pattern of local filtration anesthesia commonly used in laparotomy in the ox. T Channel-Field Effect Transistor (ITFET) device, features the industry's first ever combination of vertical and planar A technique developed by Fairchild Instruments that creates transistor sublayers by forcing chemicals under pressure into exposed areas. Planar superseded the mesa process and was a major step toward creating the chip. thin body structures within a single transistor. The technology hastens delivery of a new breed of dramatically smaller, higher performing semiconductors that require less power. Traditional CMOS (Complementary Metal Oxide Semiconductor) Pronounced "c-moss." The most widely used integrated circuit design. It is found in almost every electronic product from handheld devices to mainframes. devices deploy transistors onto the surface of the silicon in a planar -- or horizontal -- fashion. In recent years new device architectures have emerged, featuring vertical transistors that utilize multiple sides of the silicon. Vertical transistors are appealing in part because they reduce leakage and provide higher drive current -- functions of having more than one gate to control the device. Multiple gates pack more computing power into less space and reduce power consumption. But vertical transistors present fundamental design and manufacturing challenges related to mechanically stability, sub-lithographic feature sizes and patterning over tall topographies. By combining the stability and manufacturability of planar devices with the low leakage and other benefits of vertical devices, Freescale's ITFET bridges the debate on planar versus vertical CMOS devices and offers key advantages of both technologies in a single device. "Only five years ago, the prevailing consensus of the industry held that vertical devices were impractical," said Freescale Chief Technology Officer Claudine Simson Dr. Claudine Simson was vice president and chief technology officer for Freescale Semiconductor. Dr. Claudine Simson then joined LSI as Chief Technology Officer (CTO) as of March 26th. . "Due to Freescale's uncompromising commitment to technology innovation and manufacturing know-how, many vertical device issues that once were considered insurmountable have now been resolved. ITFET represents one of the most innovative and potentially disruptive semiconductor manufacturing advancements since the industry standardized on traditional planar CMOS technology more than 20 years ago." About ITFET ITFET offers better manufacturability than FinFET transistors and other vertical devices. It also provides significant advantages over planar thin body devices and other vertical multi-gate designs, including lower current leakage, easier transistor width proportioning, lower parasitic capacitance In electrical circuits, parasitic capacitance is capacitance that is not taken into account when considering ideal circuit elements. This extra capacitance usually has detrimental effects on the operation of "real life" circuits, reducing their bandwidth or enhancing their and increased on-current. The vertical and planar regions of the ITFET couple to provide enhanced current capability from an increased channel width without increasing chip area. The unique architecture of the ITFET incorporates silicon in the planar regions below the vertical channels, thereby improving manufacturability by reducing undercut below the vertical channels, reducing parasitic resistance and enhancing the mechanical stability of the vertical channels. The ITFET device was fabricated fab·ri·cate tr.v. fab·ri·cat·ed, fab·ri·cat·ing, fab·ri·cates 1. To make; create. 2. To construct by combining or assembling diverse, typically standardized parts: using innovative process techniques on 90-nanometer (nm) CMOS silicon-on-insulator production equipment at Freescale's Austin Technology & Manufacturing Center. Freescale plans to incorporate ITFET technology in a range of high-end devices beginning at the 45-nm node and beyond. ITFET is Freescale's latest addition to a growing portfolio of multi-gate technology and related breakthroughs. The company recently announced Multiple Independent Gate Field Effect Transistor See FET. (electronics) field effect transistor - (FET) A transistor with a region of donor material with two terminals called the "source" and the "drain", and an adjoining region of acceptor material between, called the "gate". (MIGFET) technology that self-aligns two electrically independent gates across a sub-40-nm vertical channel. About Freescale Semiconductor Freescale Semiconductor, Inc. (NYSE:FSL) (NYSE:FSL.B) is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. Freescale became a publicly traded company publicly traded company A company whose shares of common stock are held by the public and are available for purchase by investors. The shares of publicly traded firms are bought and sold on the organized exchanges or in the over-the-counter market. in July 2004 after more than 50 years as part of Motorola, Inc. The company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale, a member of the S&P 500(R), is one of the world's largest semiconductor companies with 2004 sales of $5.7 billion (USD USD In currencies, this is the abbreviation for the U.S. Dollar. Notes: The currency market, also known as the Foreign Exchange market, is the largest financial market in the world, with a daily average volume of over US $1 trillion. ). www.freescale.com Reader Inquiry Response: Freescale Semiconductor P.O. Box 17927 Denver, CO 80217 USA Freescale (TM) and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (C) Freescale Semiconductor, Inc. 2005. |
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