New Vishay Siliconix N-Channel PowerPAK(R) ChipFET(R) MOSFETs Offer Same 3-W Maximum Power Dissipation as Larger SO-8 in 81 % Smaller Footprint.

New Devices Feature Low On-Resistance Values Down to 0.015 Ohms 

MALVERN, Pa. -- Vishay Intertechnology, Inc. (NYSE: VSH) today released eight n-channel power MOSFETs in an innovative new PowerPAK([R]) ChipFET([R]) package that offers advanced thermal performance in a compact 3-mm by 1.8-mm footprint. Featuring a broad variety of configurations and voltages, the new devices allow designers to easily replace larger power MOSFETs in a wide range of power-conversion applications.

As a space-saving alternative to MOSFETs in the much larger SO-8 package, the new PowerPAK ChipFET devices deliver higher power density by offering the same 3-W maximum power dissipation with an 81 % smaller footprint area and a 48 % thinner height profile (0.8 mm).

For optimized design efficiency, n-channel power MOSFETs in Vishay's new PowerPAK ChipFET family are designed for point-of-load, synchronous rectification, and logic-level dc-to-dc conversion applications in low-power computer and fixed telecomm applications where space is at a premium.

N-channel PowerPAK ChipFET devices will also be used as load switches in portable electronic systems and notebook PCs, delivering footprint savings of 33 %, a 23 % thinner height profile, and a 9 % reduction in on-resistance at a 4.5-V gate drive compared with power MOSFETs in the TSOP-6.

Among the eight new devices announced today are single, dual, and single-plus-Schottky-diode power MOSFETs, with breakdown voltage ratings from 20 V to 60 V.

Single n-channel power MOSFETs in the PowerPAK ChipFET family are rated for typical thermal resistance values as low as 3 degrees Celsius/W (junction to case), with maximum on-resistance values as low as 0.015 ohms in a 20-V drain-to-source n-channel single-channel device and 0.039 ohms in a dual-channel device. The single-plus-Schottky-diode power MOSFETs feature on-resistance values as low as 0.039 ohms and Schottky diode forward voltage of 0.375 V at 1 A.

All of these new PowerPAK ChipFET devices are pin-compatible with products in the standard ChipFET package.

Links to product datasheets:

http://www.vishay.com/doc?73783 (Si5486DU)

http://www.vishay.com/doc?73589 (Si5484DU)

http://www.vishay.com/doc?73594 (Si5482DU)

http://www.vishay.com/doc?73585 (Si5480DU)

http://www.vishay.com/doc?73663 (Si5476DU)

http://www.vishay.com/doc?73460 (Si5858DU)

http://www.vishay.com/doc?73463 (Si5938DU)

http://www.vishay.com/doc?73683 (Si5944DU)

Samples and production quantities of the new PowerPAK ChipFET devices are available now, with lead times of 12 to 14 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.

PowerPAK and ChipFET are registered trademarks of Siliconix incorporated.