New Ultra-Low Power SRAM From MoSys Sets New Records for System Cost-Performance.

SUNNYVALE, Calif.--(BUSINESS WIRE)--July 16, 1998---

Broad Product Line Offering Targets Mobile, Desktop and Networking Applications, With Unprecedented 90-Percent Savings In Power Consumption And 50-Percent Savings In Board Space

MoSys, Inc., announces ultra-low power SRAM product family. A new 64Kx64, 512KByte single-chip, pipeline burst SRAM (PBSRAM), as well as 256Kx32 and 128Kx32 PBSRAMs.

The Ultra-Low Power SRAM product family is based on MoSys' patented technology, resulting in the industry's smallest memory cell array. The new products incorporate innovative and proprietary power-saving technologies and feature power dissipation 80 to 90 percent lower than competitor's offerings, at the same voltage and frequency conditions, making them ideal for Notebook PCs, Sub-notebook PCs, PDAs and other low-power applications.

Having the industry's smallest memory cell array, 75% smaller than a standard SRAM cell array, makes the Ultra-Low Power SRAM product family the most cost effective memory solution for Mobile PCs, high-performance Desktop PCs as well as networking and communication applications.

The MC80364K64, 64Kx64 PBSRAM is designed to address the stringent power and space requirements of mobile applications, reducing power consumption by almost 90 percent compared with standard PBSRAMs and featuring a built-in sleep mode extending battery life and lowering operating temperatures. Packaged in a 128-pin LQFP, the MC80364K64 measures only 14x20mm, resulting in a 50-percent reduction in board space compared to 512Kbyte caches implemented using traditional 64Kx32 PBSRAM.

The MC803128K32 and MC803256K32, 128Kx32 and 256Kx32 PBSRAMs are designed to address the cache size requirements of Desktop PCs. With operating speeds as high as 133MHz now and 166MHz devices available in Q3 '98, the devices enable the highest possible performance for systems with 1 and 2 MByte level two caches.

By employing a larger level two cache, the system performance is greatly enhanced in today's multimedia-rich applications with large data sets, even when compared to processors at higher clock frequencies, which are significantly more expensive, but with smaller level two caches.

"MoSys' SRAM is a breakthrough technology that will enable system designers to re-evaluate traditional cost-performance tradeoffs in memory hierarchy and system architecture," said chairman and CEO Fu-Chieh Hsu. "MoSys intends to bring the cost, performance and dramatic power advantages of our patented technology to all high performance SRAM application segments".

Both MC80364K64 and MC803128K32 are available now in speeds of 100, 117 and 133MHz, with 3.3V supply and 2.5V-3.3V IO voltage.

Packaged in a 128-pin LQFP, the MC80364K64 is priced at $7.00 in high volume.

Packaged in a 100-pin LQFP, the MC803128K32 is priced at $5.00 in high volume.

"Flow-through" versions, as well as, higher speed grades of 150 and 166MHz will be available in Q3 '98. Networking oriented 128Kx36 and 256Kx36 devices, with 100% bus utilization during read-write-read operations, will be introduced in Q4 '98. Additional, 8 and 16Mbit density products will follow in 1999.

MoSys, Inc. is the industry pioneer of high performance memory technologies such as multibanking, multibank caching, double data rate, fast cycle access, data streaming, terminated reduced-swing I/O switching, source-synchronous (wave-pipelining) data access, PLL-assisted clocking, ultra-fast charge sensing and ultra-fast memory cycle time. Many of these technologies are patented and incorporated in the company's high performance Multibank DRAM, MCache, ultra-fast SGRAM and ultra-low power 1T-SRAM products and building blocks.

Note to Editors: MoSys, MDRAM, MCache and Multibank are registered trademarks of MoSys, Inc., 1T-SRAM is a trademark of MoSys, Inc.

    CONTACT: MoSys, Inc.
              Andre Hassan, 408/731-1826
              [e-mail]