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New 150V Power MOSFETs Improve Efficiency; IXYS Devices Bridge 100V and 200V Industry Offerings.


SANTA CLARA Santa Clara, city, Cuba
Santa Clara (sän`tä klä`rä), city (1994 est. pop. 217,000), capital of Villa Clara prov., central Cuba.
, Calif.--(BUSINESS WIRE)--Sept. 15, 1999--

IXYS Corporation, (Nasdaq: SYXI), a leading edge supplier of semiconductors for power conversion and motion control applications, announced today the availability of two HiPerFET(TM) Power MOSFETs at a new industry voltage level of 150 Volts. The new devices deliver up to a 30% decrease in on-resistance compared to similar 200V rated MOSFETs, resulting in cooler device operation and improved circuit efficiency. The IXFH70N15 is a 70A rated device sporting an on-resistance (RDS (1) (Remote Data Services) A set of programming interfaces from Microsoft that enables users to update data on the Internet or intranets from their ActiveX-enabled browser. (on)) of 28 milliohms and is housed in the TO-247 package. The IXFX150N15 is a 150A rated device with an ultra low RDS(on) of 12.5 milliohms and is housed in the company's PLUS247(TM) package.

"These new devices offer a welcome alternative to designers who require Power MOSFETs with a Blocking voltage (BVDSS) higher than the industry standard 100V rating but without the on-resistance penalty of 200V devices," stated Rich Fassler, IXYS Vice President of Sales and Marketing. "There's been a lot of interest in this blocking voltage rating from our customers working in 48V applications. These two devices are a result of listening and responding to market needs."

Typical applications include uninterruptible power supplies, DC-DC DC-DC Direct Current to Direct Current (power conversion)  converters, and battery operated motor drives.

Unit pricing for the two types in 1,000 piece quantities is $8.58 for the IXFH70N15 and $12.17 for the IXFH150N15. Samples are currently available from stock with production quantities available in 6 weeks ARO.

IXYS offers a broad line of Power Semiconductors, including Power MOSFETs, IGBTs, Ultrafast recovery, Standard, and Schottky Diodes, Thyristor thyristor, semiconductor switch used chiefly in power-control applications. Also called a silicon-controlled rectifier (SCR; see rectifier), it is a variation of the transistor.  and Rectifier rectifier, component of an electric circuit used to change alternating current to direct current. Rectifiers are made in various forms, all operating on the principle that current passes through them freely in one direction but only slightly or not at all in the  Modules, DCB DCB Dichlorobenzene
DCB David Crowder Band
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 ceramic substrates, SRAMs, and Power Interface ICs. For further information, contact your local IXYS sales representative, an IXYS authorized distributor, IXYS Corporation at TEL TEL Telephone
TEL Telegram
TEL Telugu (langauge)
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: 408-982- 0700, FAX: 408-496-0670, or the company's website at www.ixys.com.

Statements in this press release regarding IXYS' business that are not historical facts are "forward-looking statements" that involve risks and uncertainties, including, but not limited to demand for the Company's products, the ability of the company to develop, manufacture, and market new products, demand by end-users for the products produced by the Company's customers, and the other risks detailed from time to time in the Company's reports filed with the Securities and Exchange Commission.

Note to Editors: The symbol "RDS(on)" is spelled with the "DS(on)" sub-script. The symbol "BVDSS" is spelled with the "DSS (1) (Digital Signature Standard) A National Security Administration standard for authenticating an electronic message. See RSA and digital signature.

(2) (Digital Satellite S
" subscript.
COPYRIGHT 1999 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 1999, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Date:Sep 15, 1999
Words:398
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