National Institute of Advanced Industrial Science and Technology (AIST) Prints Memory on Plastic Substrate.

Tokyo, Japan, Dec 20, 2005 - (JCN) - The Organic Semiconductor Devices Group of the Photonics Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST) has prototyped a memory device that has a 3x3 memory array printed on a flexible plastic film substrate.

The research group used a soluble biopolymer material with a bar-like helix structure to create a ferroelectric thin film by changing inter-molecular interactions by controlling the molecular weight and molecular structure of the biopolymer.

Then, the group has made a two-terminal device that has the ferroelectric thin film, treated as a dielectric layer, placed between electrodes, and confirmed that the device demonstrates memory capability.

Using the ferroelectric biopolymer thin film and an organic semiconductor, the group has prototyped a 3x3-pixel-equivalent memory array screen-printed on a flexible plastic film and confirmed that the device retains a two-digit drain current on/off ratio for more than 10 days after power is turned off.

Photo: http://www.aist.go.jp/aist_j/press_release/pr2005/pr20051219/pr20051219.html

Copyright [c] 2005 Japan Corporate News Network. All rights reserved.