NIST DATA FACILITATE MATERIALS DEVELOPMENT FOR NEXT GENERATION IC CHIP.

Data provided by NIST have been used to facilitate development of new interlevel dielectric (ILD) films for next-generation integrated circuit (IC) chips. The drive toward increased density, enhanced performance and cost effectiveness in IC technology requires the development and integration of low dielectric constant (or low-k) materials as ILD for deep-submicrometer on-chip interconnects. Over the past year, a private company initiated a new research program to pursue low-k RD development. Owing to successes achieved by NIST scientists in characterizing related materials in collaboration with SEMATECH, the company sought NIST assistance to provide critical characterization data on structure and properties. Under a cooperative research and development agreement (CRADA) between NIST and the company, NIST scientists provided characterization data on four different experimental materials. During a recent joint conference, the company disclosed that the NIST data correlated well with their internal dielectric da ta and confirmed their working model.

NIST originally developed the methodology for characterization of low-k RD under a CRADA with International SEMATECH (ISMT). Internal support was also provided by the NIST Office of Microelectronics Programs. The methodology is based on a unique combination of x-ray and neutron scattering measurements that provide critically needed data on the structure of porous thin films. Over the past 3 years, more than 30 candidate materials from ISMT and its member companies have been characterized by 41ST. The data provided by 41ST have helped ISMT establish a low-k RD database for selection of viable candidate materials for process integration. It has also enabled ISMT to provide feedback to the material suppliers for further improvement of their RD materials.