Printer Friendly
The Free Library
14,529,618 articles and books
Member login
User name  
Password 
 
Join us Forgot password?

NEC Develops Highly-Reliable Metal/High-K Gate Stack Transistor.


Tokyo, Japan, June 20, 2006 - (JCN JCN Japan Corporate News
JCN Journal of Cognitive Neuroscience
JCN Journal of Cardiovascular Nursing
JCN Journal of Christian Nursing
JCN Job Control Number
JCN Journal of Child Neurology
JCN joint communications network (US DoD) 
 Newswire) - NEC (NEC Corporation, Tokyo, www.nec.com, www.necus.com) An electronics conglomerate known in the U.S. for its monitors. In Japan, it had the lion's share of the PC market until the late 1990s (see PC 98).

NEC was founded in Tokyo in 1899 as Nippon Electric Company, Ltd.
 Corporation (NEC) today announced the joint development of a new technology for realizing low-power and high-performance SOC devices of technology nodes of 65 nm, 45 nm and beyond. The developed technology enables fabrication fabrication (fab´rikā´shn),
n the construction or making of a restoration.
 of a highly reliable metal/high-k gate transistor utilizing a simple method.

This research result was achieved by the following:

(1) Use of a highly reliable HfSiON (Hf) high-k gate dielectric A gate dielectric is a dielectric used between the gate and substrate of a field effect transistor. In state-of-the-art processes, the gate dielectric is subject to many constraints, including:
 film and a Ni-silicide gate electrode that is compatible with conventional processes.

(2) Clarification of the impact of the crystalline phase of a Ni-FUSI gate electrode on long-term reliability.

(3) A combination of NiSi (n-FET) and Ni3Si (p-FET) is adopted to ensure reliable performance.

(4) A newly developed method realizes control of the thickness of the silicon for the silicide sil·i·cide  
n.
A compound of silicon with another element or radical.

Noun 1. silicide - any of various compounds of silicon with a more electropositive element or radical
 formation, thereby enabling clear definition of the crystalline phase of NiFUSI, even in short channel gates.

(5) While controlling the height of the gate electrode, compressive com·pres·sive  
adj.
Serving to or able to compress.



com·pressive·ly adv.
 force was intentionally applied to the p-FET channel region, enhancing mobility of holes.

To date, there have been several issues with metal/high-k gate stacks including the maintenance of stable current output after prolonged operation, which has not been realized due to increased current leakage through the ultra-thin gate stack. The newly developed technology solves this major issue, in addition to lowering production costs owing to the simple process and high uniformity in transistor performance. This is a large step toward the realization of low-power-consuming devices with a metal/high-k gate stack, prolonging the battery life of mobile equipment.

NEC will accelerate its research and development on metal/high-K gate stacks toward the provision of highly reliable, low-power mobile terminals, vital in a ubiquitous networked society. The details of this research will be presented at the 2006 symposium on VLSI technology, which is being held from June 13 to 15 in Hawaii, U.S.A.

About NEC Corporation

NEC Corporation (TSE See Tokyo Stock Exchange.

TSE

1. See Tokyo Stock Exchange (TSE).

2. See Toronto Stock Exchange (TSE).
: 6701; NASDAQ NASDAQ
 in full National Association of Securities Dealers Automated Quotations

U.S. market for over-the-counter securities. Established in 1971 by the National Association of Securities Dealers (NASD), NASDAQ is an automated quotation system that reports on
: NIPNY) is one of the world's leading providers of Internet, broadband network and enterprise business solutions dedicated to meeting the specialized needs of its diverse and global base of customers. NEC delivers tailored solutions in the key fields of computer, networking and electron devices, by integrating its technical strengths in IT and Networks, and by providing advanced semiconductor solutions through NEC Electronics Corporation. The NEC Group employs more than 140,000 people worldwide and had net sales Net Sales

The amount a seller receives from the buyer after costs associated with the sale are deducted.

Notes:
This amount is calculated by subtracting the following items from gross sales: merchandise returned for credit, allowances for damaged or missing goods, freight
 of 4,855 billion yen (approx. $45.4 billion) in the fiscal year ended March 2005.

For additional information, please visit the NEC home page at: http://www.nec.com

Newsroom: http://www.nec.co.jp/press/en/

Source: NEC Corporation

Contact:
In Japan
Diane Foley
For NEC LCD Technologies
d-foley@ax.jp.nec.com
+81-3-3798-6511


Copyright [c] 2006 JCN Newswire. All rights reserved. A division of Japan Corporate News Network K.K.
COPYRIGHT 2006 Japan Corporate News Network K.K.
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2006, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

 Reader Opinion

Title:

Comment:



 

Article Details
Printer friendly Cite/link Email Feedback
Publication:JCN Newswires
Date:Jun 20, 2006
Words:471
Previous Article:NEC and NEC Electronics Announce High-Speed and Low-Power Operation of 45nm CMOS LSIs with High Performance.
Next Article:NEC Electronics and NEC Introduce High-k CMOS Technology Delivers Both Low Standby Power Consumption and High Operating Speeds; New 55nm Platform for...



Related Articles
AMI Semiconductor's new mixed-signal tech reduces sensor interface ICS by up to 40 percent.(AMI Semiconductor I3T50)
Toshiba leads in 65-nanometer CMOS process technology with lowest power consumption transistor for mobile products.
AMD research surpasses semiconductor industry's 2009 performance projections.
Straining for speed: in search of faster electronics, chip makers contort silicon crystals.
Electronics gets Y's: nanotubes branch out as novel transistors.
NEC, National Institute for Materials Science, and Japan Science and Technology Agency Develop New 'Three Terminal Nanobridge' Switch Utilizing...
NEC and NEC Electronics Announce High-Speed and Low-Power Operation of 45nm CMOS LSIs with High Performance.
NEC Electronics and NEC Introduce High-k CMOS Technology Delivers Both Low Standby Power Consumption and High Operating Speeds; New 55nm Platform for...
NEC Develops High-Power Gallium Nitride Transistor Amplifier for 3G Base Stations.
NEC Succeeds in Development of New Gate System Enabling Highly Accurate Scanning of Multiple UHF RFID Tags.

Terms of use | Copyright © 2009 Farlex, Inc. | Feedback | For webmasters | Submit articles