Mosys Introduces Industry's Highest Performance 16 Megabit Synchronous Graphics RAM.

SUNNYVALE, Calif.--(BUSINESS WIRE)--July 16, 1998--

Company Extends Technology Lead With Introduction of Second Generation Low-Latency 200 Megahertz 16 Megabit SGRAM

MoSys, Inc., is expanding its product offerings in the high-performance graphics market with the addition of a new 512kx32, 16Mbit synchronous graphics memory (SGRAM), the MG802C512, for 2D/3D graphics and multimedia applications in desktop, notebook computers and add-in cards.

With industry leading performance, the MG802C512 combines the highest bandwidth and lowest latency of any SGRAM, making this device well suited for the new generations of high performance graphics accelerators.

This new 16 Megabit SGRAM, based on the company's Multibank technology, is particularly suited for 64-bit and 128-bit 3D graphics accelerators, enabling system bandwidths up to 1.6 and 3.2 GB/sec., respectively.

Its 200MHz-clock rate allows 3.2GB/sec. block fill rate, as well as, 800Mbytes/sec. Read and Write throughputper device, in sustained data transfer, making it 60-percent faster than other currently available SGRAMs. In addition, its faster row and column access provides 40-percent lower access times than other SGRAMs.

The MG802C512 features two and four bank operation modes, LVTTL and SSTL compatibility and low clock to data out timing (sub 4ns Tco), eliminating design-in constraints at the controller and board levels. It is fully pin and function compatible with JEDEC standard SGRAMs.

"Again, our second generation SGRAM sets a new performance standard for the graphics memory industry," said Fu-Chieh Hsu, chairman and CEO "at MoSys, we are committed to push the performance envelope, to enable better and more realistic 3D graphics experience for the end-user community." -0-

     The MG802C512 is available now.
     Speed options are 125, 133, 150, 166 and 200MHz.
     2 clock CAS latency supported all speed grades through 166MHz.
     Packaging is 100-pin PQFP or LQFP, available in standard and
      reverse pinouts.
     Pricing is $8.00 in quantities of 10,000.

-0-

MoSys, Inc. is the industry pioneer of high performance memory technologies such as multibanking, multibank caching, double data rate, fast cycle access, data streaming, terminated reduced-swing I/O switching, source-synchronous (wave-pipelining) data access, PLL-assisted clocking, ultra-fast charge sensing and ultra-fast memory cycle time. Many of these technologies are patented and incorporated in the company's high performance Multibank DRAM, MCache, ultra-fast SGRAM and ultra-low power 1T-SRAM products and building blocks.

Note to Editors: MoSys, MDRAM, MCache and Multibank are registered trademarks of MoSys, Inc., 1T-SRAM is a trademark of MoSys, Inc.

    CONTACT:  MoSys, Inc.
               Andre Hassan, 408/731-1826
               [e-mail]