MoSys licenses 1T-SRAM-R embedded memory to Hitachi Information Technology.

MoSys, Inc. (Nasdaq:MOSY), a provider of high-density SoC embedded memory solutions and Hitachi Information Technology Co., Ltd. (Hitachi-IT), a Japanese Corporation that focuses on ASIC Integrated Design Services, recently announced the licensing of 1T-SRAM-R embedded memory technology to Hitachi-IT. MoSys' patented technology will enable Hitachi-IT to provide its customers with high quality ASICs for high-end instrumentation incorporating more than 50 Mb of embedded memory in a standard logic process. The 1T-SRAM-R technology has been proven to dramatically reduce soft error rates (SERs) to fewer than 10 FIT/Mb in 0.13-micron process technology resulting in improved system-level reliability at a low cost while still maintaining the simple, industry-standard SRAM interface.

"MoSys' 1T-SRAM-R is a valuable solution for embedding large high-performance memories economically into SoC designs," said Mr. Yoshiteru Keikoin, senior chief engineer at Hitachi-IT. "MoSys' 1T-SRAM-R technology in collaboration with our leading edge system concept, addresses our growing need for higher quality, high-performance, low-power embedded memory with the cost advantages that are necessary for today's products."

Hitachi-IT joins other announced licensees including National Semiconductor, Philips Semiconductor and Motorola's semiconductor products sector in using 1T-SRAM-R in a range of applications that require cost savings combined with the highest levels of quality and reliability. The SoC chips will be manufactured using TSMC's 0.13-micron standard logic process. Through the inclusion of patented Transparent Error Correction (TEC) technology, 1T-SRAM-R memory sets a new standard for quality of embedded memory.

"MoSys has demonstrated strong success in delivering its 1T-SRAM technology with customers having already shipped more than 45 million chips," said Mark-Eric Jones, vice president and general manager of intellectual property for MoSys. "Japan continues to be a powerful market for MoSys and its 1T-SRAM technology across a wide range of applications."