Mitsubishi Electric Launches New S-Band High Power Amplifier Module.TOKYO -- Mitsubishi Electric Mitsubishi Electric Corporation (三菱電機株式会社 Corporation (President and CEO (1) (Chief Executive Officer) The highest individual in command of an organization. Typically the president of the company, the CEO reports to the Chairman of the Board. : Tamotsu Nomakuchi) has developed a new S-band (2.5-2.7GHz) amplifier module which has high output power, high gain and low distortion. The module is for transmission usage as part of the Multi-channel Multi-point Distribution Service (MMDS (Multichannel Multipoint Distribution Service or Microwave Multipoint Distribution Service) A digital wireless transmission system that works in the 2.2-2.4 GHz range. ), which provides wireless broadband High-speed wireless transmission of data. What is "high" speed is always a changing number. Wireless systems are typically slower than land-based, wireline networks. In the past, wireless broadband started at 250 Kbps, whereas land-based broadband was generally considered to start at T1 internet access See how to access the Internet. to household users via fixed radio base stations. Samples will be available for sale from August 5, 2004, at a cost of 10,000 yen (excl. tax), while annual production capacity is expected to reach 200,000 units. Recently MMDS, which is capable of covering a range of 30km from each individual fixed base station, has been one of the Fixed Wireless Access (FWA (Fixed Wireless Access) See fixed wireless. ) systems drawing considerable attention, in the United States United States, officially United States of America, republic (2005 est. pop. 295,734,000), 3,539,227 sq mi (9,166,598 sq km), North America. The United States is the world's third largest country in population and the fourth largest country in area. in particular. MMDS was traditionally used for uni-directional cable television services. However, with the addition of a bi-directional communication capability it now allows for wireless broadband connection services, the market for which looks set to expand significantly in years to come. In order to increase usage of these services, a means of making cheaper the equipment required by household users to enable a wireless broadband connection is currently being sought. However, lowering the cost of modules has been made problematic due to the fact that in order to reduce the negative effect of interference with other users of MMDS, a transmission device possessing high linearity and low distortion is absolutely necessary. In response to this problem, Mitsubishi Electric developed this new, low-cost S-band amplifier module, which possesses a saturation power of 30W. Looking to the future, Mitsubishi Electric intends to continue to be extremely active in developing products capable of enabling wireless broadband access on alternative bandwidths in countries all over the world. The new S-band amplifier module allows for high quality transmission from radio base stations, and thanks to Mitsubishi Electric's exclusive HFET HFET Highway Fuel Economy Test HFET Heterostructure Field-Effect Transistor HFET Human Factors Engineering Testing HFET Heilmann-Feynman Electrostatic Theorem (1) device technology a saturation power of 30W was achieved. At a high output power, such as 34.5dBm (approx. 2.8W), the linear gain is high (21dB) and distortion is very low (minus 60dBc), and yet there is no interference with other channels. Plus, due to the use of a new module structure the price is nearly half that of its discrete device A discrete device (or discrete component) is an electronic component with just one circuit element, either passive (resistor, capacitor, inductor, diode) or active (transistor or vacuum tube), other than an integrated circuit. predecessor, providing a significant saving to household users. Finally, as the module possesses an internal matching circuit, the load on the matching circuit in the equipment required by household users is eliminated. 1: Hetero Structure Field Effect Transistor See FET. (electronics) field effect transistor - (FET) A transistor with a region of donor material with two terminals called the "source" and the "drain", and an adjoining region of acceptor material between, called the "gate".
Fig.1: Main Specifications
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Item Specification
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Model Name MGFS45H2201G
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Saturation Power 30W typ.
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Gain 21dB (at output power of 34.5dBm)
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Distortion -60dBc typ. (at output power of 34.5dBm,
OFDM(2) modulation)
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Operating Conditions:
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Frequency Range 2.5 - 2.7 GHz
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Drain Supply Voltage 10V
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Idle Current 1st stage 2.5A (tuned to 1st stage gate
voltage)
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2nd stage 7.0A (tuned to 2nd stage gate
voltage)
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Pulse Operation Period 5msec. max (duty ratio 20% max)
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Input/Output Impedance 50 Ohms
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Case Temperature 25 Celsius
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Size (w x l x h) 57.1mm x 23.8mm x 6.4 mm
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2: Orthogonal Frequency Division Multiplexing See FDM. (communications) frequency division multiplexing - (FDM) The simultaneous transmission of multiple separate signals through a shared medium (such as a wire, optical fibre, or light beam) by modulating, at the transmitter, the separate signals into separable About Mitsubishi Electric With over 80 years of experience in providing reliable, high-quality products to both corporate clients and general consumers all over the world, Mitsubishi Electric Corporation (TSE See Tokyo Stock Exchange. TSE 1. See Tokyo Stock Exchange (TSE). 2. See Toronto Stock Exchange (TSE). : 6503) is a recognized world leader in the manufacture, marketing and sales of electrical and electronic equipment used in information processing information processing: see data processing. information processing Acquisition, recording, organization, retrieval, display, and dissemination of information. Today the term usually refers to computer-based operations. and communications, space development and satellite communications, consumer electronics, industrial technology, energy, transportation and building equipment. The company recorded consolidated group sales Group sales Block sale (of large amounts) of securities to institutional investors. group sales The distribution of a new security issue to institutional clients. of 3,309 billion yen (US$31.2 billion*) in the fiscal year ended March 31, 2004. For more information visit http://global.mitsubishielectric.com. *At an exchange rate of 106 yen to the US dollar, the rate given by the Tokyo Foreign Exchange Market on March 31, 2004. |
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