Mitsubishi Electric Launches 24-Watt GaAs FET for Ku-Band VSAT; Offers Extreme High Output Power for 14-GHz Applications.

Business Editors/High-Tech Writers

International Microwave Symposium (IMS2003)

Booth #1749

PHILADELPHIA--(BUSINESS WIRE)--June 9, 2003

To realize the customer goal of smaller, lighter, and more powerful Ku-Band(a) VSAT(b) amplifiers, the Semiconductor Division of Mitsubishi Electric & Electronics USA Inc., today introduced two new gallium arsenide (GaAs) hetero-structure field-effect transistor (HFET) products.

At 24 watts, the MGFK44A4045 device delivers an extremely high output power device in the 14.0- to 14.5-GHz range. The MGFK41A4045 device offers a 12-watt output at 14.0- to 14.5-GHz.

The devices' high output power is made possible through Mitsubishi Electric's hetero-structure FET (HFET) technology. HFET technology improves on conventional metal Schottky FET (MESFET) technology by offering high breakdown voltage characteristics and higher uniformity in volume production.

As a result, the devices can be fabricated on larger dies, thereby enabling customers to design smaller and lighter power amplifiers while lowering their design and manufacturing costs.

For example, it is possible to develop a 240-watt power amplifier, utilizing 10 of the MGFK44A4045, compared with customers currently using 8-watt GaAs FETs that would need 30 devices. The MGFK44A4045 enables manufacturers to use a smaller chassis and circuit board in their power amplifier design, thereby reducing both material cost and design complexity.

Thus, VSAT system designers have greater flexibility to meet antenna, tower, and/or building design specifications, making it easier to meet environmental impact requirements. VSAT system customers also benefit from reduced setup and operating costs. Each GaAs FET is internally impedance-matched, simplifying design by eliminating the need for an external matching circuit.

"Customers have asked us to design semiconductors that will enable them to build smaller and lighter amplifiers," said Bryon Gutow, senior product marketing manager for microwave and RF products at Mitsubishi Electric & Electronics USA. "We found that by using HFET technology, we were able to offer the most powerful GaAs FETs in the industry for Ku-Band VSAT applications helping our customers meet their amplifiers size and weight goals."

Packaging, Availability, and Pricing

Mitsubishi Electric's MGFK44A4045 and MGFK41A4045 GaAs FETs are available in highly reliable, hermetically sealed metal-ceramic packages that occupy a 24.0-mm x 17.4-mm x 4.7-mm (K44A), 21-mm x 12.9-mm x 4.5-mm (K41A) footprint. Samples of both devices are available now, with volume production scheduled for August 2003 for the K41A and September 2003 for the K44A. Sample pricing is $750 each for the MGFK44A4045 device and $450 each for the MGFK41A4045 device.

MGFK44A4045 Specifications (Ta = 25 degrees C):

-- Output power at 1dB gain compression (P1dB) = 44.0 dBm

(typical)

-- Linear Power Gain (GLP) = 6.0dB (typical)

-- Power Added Efficiency (P.A.E.) = 22% (typical)

MGFK41A4045 Specifications (Ta = 25 degrees C):

-- Output power at 1dB gain compression (P1dB) = 41.0 dBm

(typical)

-- Linear power gain (GLP) = 7.0 dB (typical)

-- Power Added Efficiency (P.A.E.) = 25% (typical)

Definitions

(a) Ku-Band -- 12.4- to 18.0-GHz frequency range

(b) VSAT -- very small aperture terminal 

About Mitsubishi Electric & Electronics USA Inc.

Mitsubishi Electric Corp. manufactures a diverse range of microwave and RF semiconductors for linear, low-noise, and high-power communications applications, including satellite and terrestrial transmitters and receivers, mobile radios, cellular phones, and subscriber units. The company produces gallium arsenide (GaAs) FETs, modules, and MMICs using HBT, PHEMT, MESFET, HEMT, and HFET technologies.

The company also produces silicon RF power transistors and modules using MOS and LDMOS technologies for the industrial and consumer markets. Mitsubishi Electric markets its microwave and RF semiconductors in North America through the Semiconductor Division of Mitsubishi Electric & Electronics USA. Additional information on Mitsubishi Electric semiconductors is available at http://www.mitsubishichips.com.

Trademark Information

Mitsubishi and the Mitsubishi logo are registered trademarks of Mitsubishi Electric Corp. in the United States, Japan, and other countries. All other companies and products referenced herein are trademarks or registered trademarks of their respective holders.