Mitsubishi Electric's Leading-Edge, 0.15-um, 512-Mbit DDR and SDR SDRAMs Offer Greater Density for High-End Servers and Workstations.Business Editors/High-Tech Writers
SUNNYVALE, Calif.--(BUSINESS WIRE)--Aug. 28, 2001
The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., today announced the sample availability of 0.15-um, 512-Mbit double-data-rate (DDR (Double Data Rate) Refers to an SDRAM memory chip that increases performance by doubling the effective data rate of the frontside bus. For more details, see SDRAM.
DDR - Double Data Rate Random Access Memory ) and single-data-rate (SDR See software defined radio. ) synchronous DRAMs (SDRAMs) for high-end server and workstation, and notebook and desktop computer applications. Speed grades available include DDR266 and DDR200 for the DDR devices, as well as PC133 for the SDR devices. A leading-edge 0.15-um CMOS (Complementary Metal Oxide Semiconductor) Pronounced "c-moss." The most widely used integrated circuit design. It is found in almost every electronic product from handheld devices to mainframes. process technology enables the 512-Mbit devices to fit in a standard TSOP (Thin Small Outline Package) A very thin, plastic, rectangular surface mount chip package with gull-wing pins on its two short sides. TSOPs are about a third as thick as SOJ chips. See gull-wing lead, SOP, SOJ and chip package. Type II package.
"Mitsubishi Electric's move to the 0.15-um process technology gives our customers the next density level for our DDR and SDR SDRAM (Synchronous DRAM) A type of dynamic RAM (DRAM) memory chip that has been widely used since the late 1990s. SDRAM chips eliminated wait states by dividing the chip into two cell blocks and interleaving data between them. product lines," said Cecil Conkle, assistant vice president of DRAM marketing at Mitsubishi Electric & Electronics USA, Inc. "Mitsubishi Electric pioneered manufacturing DDR and SDR SDRAMs on the same die with a metal mask option, and these new devices make use of the same technique to drive down manufacturing costs and improve manufacturing flexibility for our customers' benefit. This is especially important at the 512-Mbit density, in which DDR will dominate but some SDR requirements must be supported, too."
The 512-Mbit DDR SDRAM is available in 128-megaword x 4-bit (128M x 4) and 64M x 8 organizations, with a bonding option. The 512-Mbit SDR SDRAMs are available in x4, x8, and x16 organizations, with a bonding option. The x4 organizations are ideal for employing system-level error correction code Noun 1. error correction code - (telecommunication) a coding system that incorporates extra parity bits in order to detect errors
telecommunication - (often plural) the branch of electrical engineering concerned with the technology of electronic (ECC (1) (Error-Correcting Code) A type of memory that corrects errors on the fly. See ECC memory.
(2) (Elliptic Curve Cryptography) A public key cryptography method that provides fast decryption and digital signature processing. ) detection and correction with "chip-kill" protection in server, workstation, networking, and communications system applications.
Mitsubishi Electric's 512-Mbit DDR SDRAMs can achieve a peak data transfer rate of 2.1 Gbytes per second at a clock frequency of 133 MHz (MegaHertZ) One million cycles per second. It is used to measure the transmission speed of electronic devices, including channels, buses and the computer's internal clock. A one-megahertz clock (1 MHz) means some number of bits (16, 32, 64, etc. -- or 266 Mbits per second per data pin -- when used with a 64-bit bus. This results from the synchronization of data input and output with the rising and the falling edges of each clock cycle, as well as through using a bidirectional data strobe that is synchronized to the source of each high-speed signal used. Another key reason why DDR SDRAMs achieve a higher speed is because they use the JEDEC-standard stub series terminated logic Stub Series Terminated Logic (SSTL) devices are a family of electronic devices for driving transmission lines. They are specifically designed for driving the DDR (double-data-rate) SDRAM modules used in computer memory. for 2.5 volts (SSTL SSTL Surrey Satellite Technology Ltd
SSTL Stub Series Terminated Logic
SSTL Site Specific Target Level
SSTL Solid State Track Link _2) interface.
Packaging, Availability, and Pricing
The 512-Mbit devices are offered in a JEDEC-standard, 400-mil, 66-pin TSOP II package for the DDR version; and a 400-mil, 54-pin TSOP II package for the SDR version.
Samples of the 512-Mbit DDR and SDR SDRAMs will be available in November 2001, with volume production scheduled for the first quarter of 2002. Sample pricing ranges from $105 to $138 each.
The 512-Mbit DDR SDRAMs will be available in the following product numbers:
-- 128M x 4 organization -- M2S12D20TP -- 64M x 8 organization -- M2S12D30TP
The 512-Mbit SDR SDRAMs will be available in the following product numbers:
-- 128M x 4 organization -- M2V M2V Mpeg 2 Video (file extension) 12S20TP
-- 64M x 8 organization -- M2V12S30TP
-- 32M x 16 organization -- M2V12S40TP
About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation is one of the world's top-10 DRAM suppliers and aggressively develops advanced DRAMs, such as DDR and SDR SDRAMs, RDRAM (Rambus DRAM) Pronounced "r-d-ram." A dynamic RAM chip technology from Rambus, Inc., Los Altos, CA (www.rambus.com). Rambus licensed its memory designs to semiconductor companies, which manufactured the chips. (R), and other emerging industry-standard DRAM types to support current and future customer requirements. Mitsubishi Electric is the first company to successfully integrate the process technologies of DRAM and processor logic with its highly acclaimed eRAM(TM) system integration technology, and has shipped embedded DRAM products in high volume for longer than any other supplier. eRAM is Mitsubishi Electric's brand name for its silicon process technology, products, and systems expertise that integrate memory and system-level core functions on the same integrated circuit to enable unprecedented overall system performance.
A top-tier semiconductor supplier, Mitsubishi Electric markets memory products and an extensive range of other semiconductors in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc. Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.
eRAM is a trademark of Mitsubishi Electric & Electronics USA, Inc. RDRAM is a registered trademark of Rambus Inc. All other companies and products referenced herein are trademarks or registered trademarks of their respective holders.
Mitsubishi, DDR, SDRAM, Synchronous DRAM, DRAM, DDR266, DDR200, PC133.