Micron Technology, Inc. Announces Sampling of 8MEG Zero Bus Turnaround SyncBurst SRAM.

BOISE, Idaho--(BUSINESS WIRE)--Feb. 10, 1999--Micron Technology, Inc., today announced the availability of 8Mb Zero Bus Turnaround (ZBT) SyncBurst SRAM samples, their latest density migration for very fast SRAM architectures.

ZBT SRAMs maximize bus utilization by eliminating the idle cycles previously required in Synchronous Burst SRAMs by microprocessor applications to transition the bus from data read to data write. Eliminating these idle cycles, the ZBT architecture provides users with higher bus efficiency, dramatically improving the throughput of communication and networking systems.

"ZBT SRAM's provide a great cost to performance solution because they allow designs for 100-percent bus utilization in systems where the bus is constantly changing from read to write and vice versa," says Mike Black, Micron Technology's SRAM Marketing Manager. "In many communications applications it is this `true' bandwidth specification that is critical."

As the third complete family of ZBT SRAM's, Micron's 8Mb ZBT SRAM follows the same functionality and pinout as the 2Mb and 4Mb products. The 8Mb supports speeds up to 150MHz. Samples of the 8Mb are currently available in the following JEDEC-standard 100-pin TQFP packages: 128K x 18, 64K x 32, 64K x 36.

"Micron worked with IDT and Motorola to develop the ZBT functionality and specification to assure our customers would have a reliable base of compatible multiple sources," adds Black.

Micron Technology, Inc., and its subsidiaries manufacture and market DRAMs, very fast SRAMs, Flash, other semiconductor components, memory modules, personal computer systems, and remote frequency identification (RFID) products. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the symbol, MU.

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology, Inc. and Motorola Inc.