Printer Friendly
The Free Library
14,529,525 articles and books
Member login
User name  
Password 
 
Join us Forgot password?

Micron Technology, Inc., Announces Sample Availability of Low Voltage, 16 Megabit, Read-While-Write, Page Mode Flash Devices.


Business Editors/Technology Writers

BOISE, Idaho--(BUSINESS WIRE)--April 30, 2001

Micron Technology Micron Technology ("Micron") NYSE: MU is a multinational company based in Boise, Idaho, USA, best known for producing many forms of semiconductor devices. This includes DRAM, SDRAM, flash memory, and CMOS image sensing chips. , Inc., (NYSE NYSE

See: New York Stock Exchange
:MU) today announced sample availability of 16Mbit Page mode Flash components.

Micron's wireless flash product portfolio continues to grow and diversify through the introduction of these new 16Mbit read-while-write Page mode Flash devices. This new flash device compliments Micron's current offerings, by providing our customers a selection of 16Mbit devices. Last year, Micron introduced a 16Mbit asynchronous Refers to events that are not synchronized, or coordinated, in time. The following are considered asynchronous operations. The interval between transmitting A and B is not the same as between B and C. The ability to initiate a transmission at either end.  wireless flash memory component. With the addition of the 16Mbit Page mode device, Micron's product portfolio provides an alternative in 16Mbit devices, better meeting the specific design requirements of individual customers.

"Micron is poised to take advantage of the projected increase in demand for low voltage Low voltage is an electrical engineering term that broadly identifies safety considerations of an electricity supply system based on the voltage used. While different definitions exist for the exact voltage range covered by "low voltage", the most commonly used ones include "mains  Wireless Flash products," said Kevin Widmer, Director of Strategic Marketing for Wireless Memory Products. "The benefit of this 16Mbit Page mode device is it has the same pinout and interface as an asynchronous product, allowing for drop-in replacement while providing enhanced read performance. This addition to our broad range of products positions Micron well to support our wireless customers in the transition to higher-performance, low-power handsets."

These devices (MT28F162P18FG and MT28F162P20FG) are specifically designed for mobile phones, meeting the needs of the latest generation of mobile phone platforms. The 16Mbit Page mode memory An earlier speed enhancement to dynamic RAM (DRAM) chips. Also known as "fast page mode" (FPM) memory, the row of bits is selected only once for all columns within the row. Previously, each bit was accessed by pulsing its row and column.  provides increased performance (Page-mode), more flexibility (simultaneous read-while-write) and longer battery life (lower voltage range than 3.0V) to designers driven to lower power consumption, without requiring a redesign of their current Flash memory platform.

Offering dual-bank architecture, Micron's 16Mbit Page mode flash devices allow for simultaneous read-while-write operation. These 16Mbit devices are organized as a 1Mbit X 16 and are manufactured on Micron's 0.22-micron process technology. Other features include: asynchronous access times of 80 nanoseconds (ns) for the MT28F162P20FG and 90ns for the MT28F162P18FG; page access time of 30ns for the MT28F162P20FG and 35ns for the MT28F162P18FG; two power supply ranges, 1.65V to 1.95V (MT28F162P18FG ) and 1.80V to 2.20V (MT28F162P20FG); a 48-pin FBGA FBGA Fine-Pitch Ball Grid Array
FBGA Fine Pitch Bga
FBGA Fine Line Bga
 package with 0.75 pitch; an extended temperature range of -40-degrees to +85-degrees Celsius; and a one-time programmable (OTP (1) (One Time Programmable) Refers to programming content or logic into chips such as EPROMs and EEPROMs, which cannot be reversed. See antifuse.

(2) (One Time P
) area to accommodate security codes.

Micron Technology, Inc., and its subsidiaries manufacture and market DRAMs, very fast SRAMs, Flash Memory, other semiconductor components, and memory modules. Micron's common stock is traded on the New York Stock Exchange New York Stock Exchange (NYSE)

World's largest marketplace for securities. The exchange began as an informal meeting of 24 men in 1792 on what is now Wall Street in New York City.
 (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit its web site at www.micron.com.
COPYRIGHT 2001 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2001, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

 Reader Opinion

Title:

Comment:



 

Article Details
Printer friendly Cite/link Email Feedback
Publication:Business Wire
Geographic Code:1USA
Date:Apr 30, 2001
Words:406
Previous Article:C-MAC Industries: Annual and Special Meeting of Shareholders.
Next Article:Viking Components Expands Flash Memory Line to Include Secure Digital Cards; Secure Digital Cards are Small, Durable & Transportable Storage...
Topics:



Related Articles
AMD Introduces Advanced Flash Memory Devices for Cellular Phones; Industry leading performance and density at 1.8 volts.
Micron Technology, Inc., Announces Industry's First 1.5 Volt 32 Megabit Flash Device.
AMD INTROS INDUSTRY'S FASTEST 128MB FLASH MEMORY DEVICE.(Am29PDL128 flash memory device)(Product Announcement)
Micron Technology, Inc., Announces Sample Availability of 143 MHz SyncFlash Memory; A Multitude of Enhancements Simplify Designs Integrating...
AMD intros the lowest power flash memory device for high-end cellular phones.(AMD's Am29BDS640G flash memory unit)(Product Announcement)
AMD intros high-performance Flash memory device.(AMD Am29PDL640G)
Spansion Flash memory enhances mobile 3-d graphics development on ARM RealView Versatile Platform.(FASL LLC Spansion Flash memory upgrade modules for...
Ramtron announces 1-megabit FRAM memory.(ferroelectric random access memory, Ramtron International Corp.)
STMicroelectronics announces SPI serial flash compatible with the leading chipset family.
Fujitsu Starts Volume Production of 2 Mbit FRAM Chips; Industry-leading Volume Production of Largest Capacity FRAM Chips.

Terms of use | Copyright © 2009 Farlex, Inc. | Feedback | For webmasters | Submit articles