Micron Technology, Inc., Announces Industry's First 1.5 Volt 32 Megabit Flash Device.Business Editors, Technology Writers BOISE, Idaho--(BUSINESS WIRE)--May 30, 2001 Micron Technology Micron Technology ("Micron") NYSE: MU is a multinational company based in Boise, Idaho, USA, best known for producing many forms of semiconductor devices. This includes DRAM, SDRAM, flash memory, and CMOS image sensing chips. , Inc., (NYSE NYSE See: New York Stock Exchange :MU) today announced sample availability of the industry's lowest voltage 32 Mbit wireless flash component. Micron's 32 Mbit device supports various operating modes including page and burst, while operating with a power supply as low as 1.425V. Micron is the first memory manufacturer to produce a 32 Mbit read-while-write Burst/Page Flash device operating at 1.5V. This device (MT28F322D15FH) is specifically designed for mobile phones, meeting the performance and low power needs of next generation mobile phone platforms. "Micron took a major step forward in our capabilities to meet the challenging needs of our customers who are designing 3G platforms today," said Kevin Widmer, Director of Strategic Marketing for Wireless Memory Products. "These customers require very high throughput from the memory subsystem, while at the same time trying to minimize power consumption. The digital Base Band (DBB DBB Deutscher Beamtenbund (German: National Union of Civil Servants) DBB Dynamic Bass Boost DBB Double Block & Bleed (valve) DBB Design Bid Build DBB Digital Baseband DBB DescentBB ) chipsets used in 3G platforms are moving to operating voltages as low as 1.5V. Micron's new low-power, 32 Mbit device allows a direct interface between the DBB and the Flash, achieving the minimum power consumption while operating at a burst frequency as high as 40 MHz (MegaHertZ) One million cycles per second. It is used to measure the transmission speed of electronic devices, including channels, buses and the computer's internal clock. A one-megahertz clock (1 MHz) means some number of bits (16, 32, 64, etc. ." Offering dual-bank architecture, Micron's 32 Mbit Burst/Page flash device allows for simultaneous read-while-write operation. It operates with nominal supply voltage of 1.5V +/- five-percent (1.425V minimum and 1.575V maximum), with an extended input/output voltage range of 1.65V to 1.95V, thus allowing a direct interface with other devices in the system unable to operate at a lower voltage. This 32 Mbit device is organized as a 2 Mbit X 16 and is manufactured on Micron's 0.18-micron process technology. Other features include: an asynchronous Refers to events that are not synchronized, or coordinated, in time. The following are considered asynchronous operations. The interval between transmitting A and B is not the same as between B and C. The ability to initiate a transmission at either end. access time of 100 nanoseconds (ns), a page access time of 30ns and a 25ns burst rate when used in burst mode; a 58-ball (MT28F322D15FH) FBGA FBGA Fine-Pitch Ball Grid Array FBGA Fine Pitch Bga FBGA Fine Line Bga package with 0.75 pitch; an extended temperature range; and a one-time-programmable (OTP (1) (One Time Programmable) Refers to programming content or logic into chips such as EPROMs and EEPROMs, which cannot be reversed. See antifuse. (2) (One Time P ) area to accommodate security codes. Micron Technology, Inc., and its subsidiaries manufacture and market DRAMs, very fast SRAMs, Flash Memory, other semiconductor components, and memory modules. Micron's common stock is traded on the New York Stock Exchange New York Stock Exchange (NYSE) World's largest marketplace for securities. The exchange began as an informal meeting of 24 men in 1792 on what is now Wall Street in New York City. (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit its web site at www.micron.com. |
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