Micron Introduces Next-Generation Networking Memory for the Efficient Transfer of Information across a Network; Micron Increases Speed, Ups Density and Lowers Latency in Next-Generation RLDRAM(R) Memory.BOISE, Idaho “Boise” redirects here. For other uses, see Boise (disambiguation). Boise is the capital and most populous city of the U.S. state of Idaho. It is the county seat of Ada County and the principal city of the Boise metropolitan area. -- Micron Technology Micron Technology ("Micron") NYSE: MU is a multinational company based in Boise, Idaho, USA, best known for producing many forms of semiconductor devices. This includes DRAM, SDRAM, flash memory, and CMOS image sensing chips. , Inc. (NYSE NYSE See: New York Stock Exchange :MU), today introduced the next-generation of its reduced latency DRAM (RLDRAM (storage) RLDRAM - (Reduced Latency DRAM) A kind of dynamic random access memory. RLDRAM comes in "common IO" and "separate IO" configurations. It supports broadside addressing. It is typically used in networking gear and set-top boxes that require high bandwidth memory. ) II memory to meet the growing bandwidth requirements Bandwidth requirements (communications) The channel bandwidths needed to transmit various types of signals, using various processing schemes. Every signal observed in practice can be expressed as a sum (discrete or over a frequency continuum) of sinusoidal of today's popular networking applications that send voice, video and data -- known as the triple play of communications services -- across the Internet. Micron has increased the density of its RLDRAM II networking products from 288 Megabits (Mbs) to 576 Mbs and upped the speed from 400 megahertz One million cycles per second. See MHz. MegaHertz - (MHz) Millions of cycles per second. The unit of frequency used to measure the clock rate of modern digital logic, including microprocessors. (MHz (MegaHertZ) One million cycles per second. It is used to measure the transmission speed of electronic devices, including channels, buses and the computer's internal clock. A one-megahertz clock (1 MHz) means some number of bits (16, 32, 64, etc. ) to 533 MHz, while reducing the latency from 20 nanoseconds to 15 nanoseconds. The combination of these three improvements allows for the efficient, fast transfer of information across a network. Networking companies are rolling out next-generation networking systems, increasing their network speeds to 10 Gigabits per second from 3 Gbps. To meet these increased speeds, it is imperative that the memory technology also support additional features such as triple play services, quality of services (QoS), information multicasting, as well as traffic policing and security. These advanced services need the bandwidth and scalability to support huge numbers of information being pushed across the networks, as well as lower latency, and increased performance. RLDRAM memory is part of the solution to meet these exceedingly stringent market demands. "Today's networking environment is drastically changing as the market trends toward the combination of voice, video and data transmission over the Internet," said Raymond Fontayne, networking product marketing manager at Micron Technology, Inc. "We are committed to providing our customers with high-performing, ultra-dense, low-latency memory solutions to meet their networking needs." Micron has experienced strong customer feedback and interest in its networking solutions, as customers migrate from FCRAM FCRAM Fast Cycle Random Access Memory FCRAM Fast Cycle Ram to high-performing RLDRAM. Asserting Micron's RLDRAM efforts, Dr. Pradeep Sindhu Ph.D, Co-Founder, Vice Chairman and Chief Technical Officer from Juniper Networks, Inc. said, "RLDRAM is a good choice for Juniper. We arrived at this decision after analyzing a whole slew of alternatives." Micron is currently sampling to select customers with mass production expected in the first quarter of 2007. Additional information on Micron's RLDRAM product portfolio can be found at http://www.micron.com/products/dram/rldram/. About Micron Micron Technology, Inc. is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, NAND flash memory, CMOS image sensors, other semiconductor components, and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron's common stock is traded on the New York Stock Exchange New York Stock Exchange (NYSE) World's largest marketplace for securities. The exchange began as an informal meeting of 24 men in 1792 on what is now Wall Street in New York City. (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com. Micron and the Micron orbit logo are trademarks of Micron Technology, Inc. RLDRAM(R) RLDRAM is a trademark of Infineon Technologies AG in various countries, and is used by Micron Technology, Inc. under license from Infineon. All other trademarks are the property of their respective owners This press release contains forward-looking statements regarding the production of 576-RLDRAM memory. Actual events or results may differ materially from those contained in the forward-looking statements. Please refer to the documents the Company files on a consolidated basis from time to time with the Securities and Exchange Commission,specifically the Company's most recent Form 10-K Form 10-K A report required by the SEC from exchange-listed companies that provides for annual disclosure of certain financial information. Form 10-K See 10-K. and Form 10-Q Form 10-Q See 10-Q. . These documents contain and identify important factors that could cause the actual results for the Company on a consolidated basis to differ materially from those contained in our forward-looking statements (see Certain Factors). Although we believe that the expectations reflected in the forward-looking statements are reasonable, we cannot guarantee future results, levels of activity, performance or achievements. We are under no duty to update any of the forward-looking statements after the date of this press release to conform to actual results. |
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