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Macronix Announces NBit, A New 2bits/cell Technology For Non-volatile Memory Solutions.


TAIWAN -- Macronix announces a new nitride-based multiple bits/cell technology - NBit(TM), starting with 2bits/cell solutions. This trap-charge technology stores two bits of information in each cell which provides double the storage capacity for the same die size in comparison to conventional technologies. This technology is utilized to provide highly cost-effective NOR Flash and Mask ROM (mask Read Only Memory) Refers to ROM chips. The term is used to differentiate static ROM chips from programmable ROM varieties (EPROM, EEPROM, flash ROM). See ROM.  solutions across a wide range of densities.

Conventional silicon-based floating gate NOR Flash memory products can physically store only one bit of information in each cell. NBit(TM) technology physically stores 2 bits of information in each cell as shown in the diagram below. The nitride-based cell "traps" the charge on one side of the cell and the charge does not flow to the other side of the cell unlike floating gate cells. Hence another charge can be stored physically on the other side of the cell providing two bits per cell.

Since there is no floating gate, the process is simpler and easier to scale down to smaller geometries, and the process development time is shorter. The cell size is compact and the data is stored reliably in the device.

Programming of each bit is performed by hot electron A Hot Electron is an electron which is not in thermal equilibrium with the lattice. It occurs in the region of semiconductor device featuring high electric fields. Source
  • http://semiconductorglossary.com/default.asp?searchterm=hot+electron
 injection, erase is performed by band to band tunneling tunneling, quantum-mechanical effect by which a particle can penetrate a barrier into a region of space that would be forbidden by ordinary classical mechanics. , and read by the reverse read mechanism.

"As Macronix develops the NBit(TM) family of NROM-based products, the storage side of the non-volatile market opens up to them," states Alan Niebel, principal analyst at Web-Feet Research. "This expansion into the storage market validates the NROM-type of Flash offered through Spansion, Infineon and Saifun, and positions Macronix as a world-class memory manufacturer."

To store two bits of information in a cell, other solutions offer a Multi Level Cell (MLC (MultiLevel Cell) A flash memory technology that stores more than one bit per cell. Traditional flash memory defines a 0 or 1 bit based on a single voltage threshold. ) with voltage dividers voltage divider: see potentiometer.  to store multiple bits in the cell. The MLC technique requires several more layers of processing and is not as scalable as the NBit(TM) technology. NBit(TM) technology is much more cost effective and easily scalable compared to the MLC technology.

"NBit(TM) is the technology of the future for the company and we are offering our high density flash and ROM products starting with 32Mb going to 1Gb and beyond," said Dr. C was a fictional scientist from the TV series Cro. She and her companion, Mike, went to the Arctic and thawed out a mammoth, who could talk. That mammoth now tells stories of life in the stone age with his friend, Cro, and his fellow mammoths. . Y. Lu, Senior Vice President and CTO (Chief Technical Officer) The executive responsible for the technical direction of an organization. See CIO and salary survey.  of Macronix.

For details on NBit(TM) technology refer to the White Paper & Technology Paper at the Macronix website, http://www.macronix.com.
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Publication:Business Wire
Geographic Code:1USA
Date:Jun 7, 2005
Words:392
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