MOSFET modeling for VLSI simulation; theory and practice.9789812568625
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged modeling for VLSI VLSI: see integrated circuit.
(1) (Very Large Scale Integration) Between 100,000 and one million transistors on a chip. See SSI, MSI, LSI and ULSI.
(2) (VLSI Technology, Inc., Tempe, AZ, www.semiconductors. simulation; theory and practice.
International series on advances in solid state electronics and technology
This classic text, first published in 1993 by Springer- Verlag, explains compact modeling of electronic and semiconductor devices and components. The book deals with MOS (1) (Metal Oxide Semiconductor) See MOSFET.
(2) (Mean Opinion Score) The quality of a digitized voice line. It is a subjective measurement that is derived entirely by people listening to the calls and scoring the results from field effect transistor See FET.
(electronics) field effect transistor - (FET) A transistor with a region of donor material with two terminals called the "source" and the "drain", and an adjoining region of acceptor material between, called the "gate". (MOSFET) models that are derived from basic semiconductor theory. Coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in MOS VLSI technology. The assumptions used to arrive at the models are emphasized. Device reliability models are also covered. Arora is a Distinguished Lecturer of the IEEE (Institute of Electrical and Electronics Engineers, New York, www.ieee.org) A membership organization that includes engineers, scientists and students in electronics and allied fields. Electron Devices Society.
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