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M/A-COM Announces Enhancement/Depletion Semiconductor Process; Gallium Arsenide Component Leader Introduces Two New Products Using Process.


Business/Technology Editors

LOWELL, Mass.--(BUSINESS WIRE)--March 16, 2000

M/A-COM, Inc., a leading global provider of wireless radio frequency (RF), microwave and millimeter wave integrated circuits Integrated circuits

Miniature electronic circuits produced within and upon a single semiconductor crystal, usually silicon. Integrated circuits range in complexity from simple logic circuits and amplifiers, about 1/20 in. (1.
, today announced a Gallium Arsenide An alloy of gallium and arsenic compound (GaAs) that is used as the base material for chips. Several times faster than silicon, it is used in high frequency applications such as cellphones, DVD players and fiber optics.  (GaAs) based Enhancement/Depletion (E/D E/D Enhancement/Depletion
E/D End-Of-Descent (aviation) 
) mode semiconductor integrated circuit process. M/A-COM has installed the process at both its Colorado Springs fabrication fabrication (fab´rikā´shn),
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 GaAsTEK), placing it among the few companies in the world manufacturing E/D integrated circuits.

M/A-COM developed the E/D process to meet the increasingly stringent linearity and single supply voltage requirements of second generation (2G) and third generation (3G) wireless handsets, infrastructure and wireless local area network products. In addition, this process will also support the integration of both high-frequency analog and high-speed digital circuitry on the same semiconductor chip.

"The E/D mode process provides breakthrough performance," said Larry Ward, General Manager, M/A-COM's Integrated Semiconductor Business Unit. "This process allows M/A-COM to provide products with higher linearity and efficiency to today's wireless marketplace where battery life and talk time matter. It also positions us well to innovate the next generation of highly integrated solutions that the market will require."

About the E/D Process

The E/D process features two FET FET: see transistor.


(Field Effect Transistor) One of two major categories of transistor; the other is bipolar. FETs use a gate element that, when charged, creates an electromagnetic field that changes the conductivity of a silicon
 device types (one enhancement mode FET and one depletion mode FET). The enhancement device supports on-chip gain mode switching without requiring a negative supply voltage. The depletion mode device is ideal for RF switching, mixing and amplification. Cellular phone transceivers developed using this process offer more than 50% lower current consumption for equivalent RF performance compared to the latest Silicon Germanium (SiGe) BiCMOS products.

Key figures of merit for this process are: Ft of 25 GHz and a Fmin of 0.3 dB with an associated gain of 16dB at 2 GHz. For frequency converters requiring optimum linearity with minimum current, the E/D process defines a new level of performance. The process achieves an IP3 efficiency of 7.5, which is more than twice that of the best SiGe technology currently available.

Two New Products

M/A-COM's first two standard products based on the E/D process are currently in volume production. The MD59-0021 features a fully integrated LNA/Downconverter IC with LNA LNA Low-Noise Amplifier
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 and LO buffer. Key attributes of the MD59-0021 include low noise figure, high input intercept point and optional control of LNA IP3. The MD59-0022 is a fully integrated Upconverter/Driver featuring an IFA, upconverting mixer, 2 stage driver and LO buffer. Key attributes of the MD59-0022 include a very linear power amplifier driver with a current saving mode leading to increased talk time for phone users. Both products are designed for digital PCS (1) (Personal Communications Services) Refers to wireless services that emerged after the U.S. government auctioned commercial licenses in 1994 and 1995. This radio spectrum in the 1.  applications and operate on a single 2.7V supply.

"These two products represent the first of several standard converter offerings we will release in the PCS and cellular bands using the E/D process this year," said Suja Ramnath, Product Manager, Multi-Function IC Product Line, M/A-COM. "The MD59-0021 and MD59-0022 are second generation devices which leverage the high level performance of our E/D process. We have shipped tens of millions of converters to major handset OEM's in the past year and now look forward to continued success with our new E/D converter products."

M/A-COM Company Background

M/A-COM, Inc., headquartered in Lowell MA, is a leading supplier of radio frequency (RF), microwave and millimeter wave integrated circuits and IP Networks to the wireless telecommunications and defense-related industries. M/A-COM's products include semiconductor devices, RF integrated circuits, passive and control devices, antennas, subsystems and systems. Employing more than 3,300 people, M/A-COM has offices and manufacturing facilities worldwide.

Editor's Notes:
COPYRIGHT 2000 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2000, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Geographic Code:1USA
Date:Mar 16, 2000
Words:618
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