Leveraging Its DRAM Technology Leadership and Expertise, Micron's RLDRAM II Products Exceed Expectations.

Business Editors/High-Tech Writers

BOISE, Idaho--(BUSINESS WIRE)--Jan. 27, 2004

Micron Sees Higher Than Expected Yields to 20ns Random Cycle Time

and 400 MHz Clock Rates

Micron Technology, Inc. (NYSE:MU), today announced the 288 megabit (Mb) reduced latency DRAM II (RLDRAM(TM) II) products are surpassing performance expectations, meeting and exceeding the targeted timing parameters originally specified. Micron is exploring the potential of these devices operating at a random cycle time (tRC) below 20 nanoseconds (ns). Micron's RLDRAM II products are ultra high-speed DDR SDRAMs, combining fast random access with extremely high bandwidth and high density targeting communication and data storage applications.

"Micron's RLDRAM II products offer unparallel performance, providing our customers the best combination of frequency and low latency," said Jan du Preez, Micron's Vice President of Networking and Communications. "We are excited to see the 288Mb RLDRAM II device surpass performance expectations achieving high-bandwidth performance greater than that provided by other reduced latency technologies. Many of our customers tell us RLDRAM II is their high-performance memory of choice. Customer demand and enabler support validates RLDRAM II as the high-performance leader in the reduced latency technology market."

Many of today's high-speed applications require increased bandwidth for high data transfer rates. RLDRAM II products boast 400 MHz clock rates providing 800 megabits per second per pin (Mb/s/pin) data rates and a 20ns tRC. The device's eight-bank architecture is optimized to meet the performance requirements of networking and video processing applications, achieving a peak bandwidth of 28.8 gigabits per second (Gb/s) using a 36-bit interface. In addition to providing optimum bus utilization efficiencies beyond anything currently available in the market place, advantages of the RLDRAM II product feature set include: on-die termination (ODT), multiplexed or non-multiplexed addressing, on-chip delay lock loop (DLL), common and separate I/O, programmable output impedance and a power efficient 1.8V core. These features offer designers increased flexibility, providing a memory solution designed to fully optimize bus utilization whether the data bus is unidirectional or has a balanced READ and WRITE ratio. Furthermore, Micron is currently working with key enablers, such as Altera, to provide system designers with reference platforms.

"With Micron's 288Mb device surpassing the targeted timing parameters originally specified, Altera is excited to fully enable these high-performance RLDRAM II devices via dedicated memory I/O features found only in Stratix FPGAs," said Justin Cowling, Marketing Director of Altera's Intellectual Property Business Unit. "Our technology is already enabling key customers in the telecommunications and video markets to take advantage of the high-bandwidth and ultra low latency found only in RLDRAM II products."

RLDRAM II devices are available in a standard 144-ball FBGA, 11mm x 18.5mm package to enable ultra high-speed data transfer rates and a simple upgrade path from former products.

Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, Flash memory, CMOS image sensors, other semiconductor components and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit its web site at www.micron.com.

Micron and the Micron logo are trademarks of Micron Technology, Inc. RLDRAM is a trademark of Infineon Technologies AG in various countries, and is used by Micron Technology, Inc. under license from Infineon. All other trademarks are the property of their respective owners.