L International Announces Its Next-Generation PuRAM-GO(TM)/PuRAID-GO(TM) Ultra-Portable High-Speed Solid State Drive Technology.

BEVERLY HILLS, Calif. -- High-Performance Non-Volatile PuRAM Solid State Drive Technology to Be a Part of Small Form-Factor L Laptop and Handheld Computer Systems

L International Computers Inc. "L" (Pink Sheets:LITL), a renowned manufacturer of high-performance computers and personal/business technologies, unleashed today a new Solid State Drive micro-design based on its PuRAM(TM) Solid State Drives Technologies to be standard on all of L's upcoming ultra-portable notebooks and handheld computing devices.

Available soon in Serial-ATA (I and II), and Compact Flash interfaces with sizes of up to 16GB per volume and in Dual or Quad performance array configurations up to 64GB per volume (Raid-0), L's new PuRAM-GO(TM) and PuRAID-GO(TM) Solid State Drives will be the world's highest performing and pioneering micro storage devices designed around ultra-fast high-bandwidth FlashRAM microchips for ultra-portable notebook computers and emerging high-performance handheld devices.

Capable of real-world internal I/O speeds in excess of 3GS/s and up to 500,000 I/Os per second with near zero access time values, L's new PuRAM-GO(TM) and PuRAID-GO(TM) technological blueprint brings ultra high-end SSD workstation/Server drive performance to small form factor computing systems, with truly astounding performance and battery energy saving figures.

For years, computer engineers have dreamed of using large quantities of RAM to store modern operating systems and commonly used user files, in order to improve performance in the value of hundreds of times when performing demanding I/O operations. Unfortunately two drawbacks of RAM have held back this type of advancement: 1) Even in small storage capacities, RAM has historically been (dollar per megabyte of storage) one of the most expensive components of a computer's design, and 2) RAM is volatile and loses data when power is cut from the computer. With archetypal RAM based Solid State Disk Drives, a user's computer would be reliant on UPS or battery packs for power, and left with endless data replacement issues and a plethora of other usability problems making it difficult for the technology's real-world application in mainstream computing. To overcome all these issues, L's PuRAM-GO(TM) and PuRAID-GO(TM) Technology was designed with a streamlined/problem solving/high-end design approach, focusing on high performance, energy saving, data integrity, drive lifespan and transparently seamless usability.

L's PuRAM-GO(TM) and PuRAID-GO(TM) Drives deliver the best of both worlds in terms of superior performance, non-volatility, reliability, storage capacities that exceed those of mechanical disk drives, and a fraction of the power consumption of its "spinning" counterparts. With up to a native 3GB/s internal transfer rates, applications load near instantaneously while file moving and copying commands respond at blazing speeds never before possible. Additionally, built-in intelligent software and advanced fail-safe data integrity and diagnostics circuitry deliver enhanced performance and reliability that is expected in the most demanding applications and data intensive environments. A custom, intermediate Flash-bus between device-specific buffers and Flash-intelligent DMA controllers is employed to carry commands, addresses, and data between the DMA controller and buffer chips. Four-way interleaving of data between the buffer chips and Flash memory banks coupled with time-multiplexed busy signaling throughout the whole bus delivers unprecedented media transfer rates in the Flash SSD industry.

Moreover, because any storage peripheral that does not employ any method of buffering between the storage medium and the system interface will suffer in terms of poor I/O performance, PuRAM-GO(TM) and PuRAID-GO(TM) drives employ built-in high-speed DRAM caching modules that serve as write policies performance enhancers. Equally, the firmware has special algorithms to distribute erase/write cycles evenly across all Flash memory block locations. As per Flash memory specifications, it can be determined that the write cycle endurance of a 16GB L's PuRAM-GO(TM) Drive is abound 157 years at 1TB worth of writes per day, more than 100 times the lifespan of an average hard drive. Unlimited read operations do not affect the lifetime of the PuRAM-GO(TM) and PuRAID-GO(TM) drives. Moreover, their native endurance can be further extended by at least a factor of 15 times when used in conjunction with intelligent maintenance features such as RS-ECC threshold tuning, flash memory scrubbing and fully associative caching. PuRAM-GO(TM) and PuRAID-GO(TM) Drives have a data shelf life of around 10 years, even if the device is never turned on during such a period of time.

To ensure data integrity L's PuRAM-GO(TM) and PuRAID-GO(TM) Drive Technology utilize a proprietary Interleaved Reed-Solomon Error Correction Code (RS ECC) which is optimized for use with Flash memory. The RS-ECC code delivers an accuracy of a probability of less than 10-30 undetected data errors. It corrects up to six random byte errors per 528-byte blocks and detects burst errors up to nine bytes long. Additionally with its proper decoding algorithm, it will NEVER miscorrect three random byte errors as it will only miscorrect less than 0.1% of the time for errors greater than 9 bytes out of 528 bytes. A configurable ECC Threshold implements block memory remapping when the number of correctable errors for that block reaches a user configurable threshold value. Tuning this parameter minimizes the frequency of remapping blocks that exhibit a correctable error count less than the threshold. It also reduces the probability that certain blocks having correctable errors greater than the threshold will turn into blocks with uncorrectable errors.

L's PuRAM-GO(TM) and PuRAID-GO(TM) internal programmable and upgradeable firmware automatically monitors and corrects errors in every location of Flash memory. This process is executed in the background without affecting system performance while it monitors how much block erase/write wear-out the disk has accumulated. Finally in the chance that a PuRAM-GO(TM) and PuRAID-GO(TM) device encounters bad memory blocks as it approaches its write/erase cycle endurance limit, remapping is performed on the fly by its firmware to replace logical block address entries that point to bad memory blocks with new good blocks. Every PuRAM-GO(TM) and PuRAID-GO(TM) Drive is shipped with a number of good reserved memory blocks for this purpose, allowing for hundreds of thousands of hours of continuous, intensive and totally trouble-free operation. As for data security and integrity, and unlike traditional hard drives, L's PuRAM-GO(TM) and PuRAID-GO(TM) Drives have extremely advanced Self-Healing Diagnostics and Maintenance circuitry.

Intelligent firmware provides predictive maintenance capabilities that provide early warning of impending catastrophic failure long before it occurs. If for any reason a drive should fail, built-in Plug and Play corrective maintenance features facilitate repairs and simplifies recovery procedures in a very short period of time. Further Data Integrity technologies include:

--1) All writes to the peripheral are halted before the voltage drops below critical thresholds reducing the risk of data corruption to file allocation or translation tables in the event of an aborted write operation (peripherals that do not have any low voltage detection logic, such as hard drives, are more exposed to data corruption because device writes are allowed to continue during low voltage conditions).

--2) Allocating a number of reserved memory blocks for use as a scratchpad and for internal translation tables, pre-writing modifications to the translation tables to the scratchpad area reduces the risk of data and FAT corruption due to low voltage writes by reducing the window of vulnerability that the Flash device spends in the write phase.

--3) Variable Flash Cache Size minimizes data loss during unexpected power failure by reducing the size of the write dirty cache to at least one sector or block of data for the controller to write.

L's new PuRAM-GO(TM) and PuRAID-GO(TM) designs represent a new industry benchmark that L International is pleased to carry its innovation trademark as just upgraded performance but a revolution in ultra-mobile computer storage architecture.

About

Founded in 2002, L International Computers Inc. designs, manufactures, markets and distributes high-performance, opulent PC/Windows(C) laptop, desktop, workstation and server computers. The Company also produces the largest and most spectacular personal & professional visual displays as well as ultra-high performance software, peripherals and personal electronics technologies. L is positioned by the mainstream market not as "the computers you need," but "the technology you love," and by the high-end luxury and professional markets as the absolute and no-contest highest performance/upper-class hardware solutions provider, at any given price point. For more information, please visit www.L-Computer.com and www.Go-L.com.

This press release may contain forward-looking statements which are pursuant to the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Investors are cautioned that actual results may differ materially and all forward-looking statements involve risks and uncertainties including, without limitation, risks associated with the Company's financial condition and prospects, risks associated with market acceptance and technological changes, risks associated with dependence on third party software providers, risks relating to international operations, and risks associated with competition.

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