Kopin Presents Results of a New High-Efficiency, Low-Voltage Transistor for Wireless Market.Business/Technology Editors
TAUNTON, Mass.--(BUSINESS WIRE)--Jan. 23, 2003
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Kopin Corporation (Nasdaq: KOPN), today announced a breakthrough technology called GAIN-HBT that will give digital cell phones significantly reduced power consumption, longer battery life and improved signal quality.
As consumers increasingly migrate to advanced digital cell phones, they are becoming "power hungry." These devices - especially the new color digital cell phones - are often left on so that users can receive data and use a host of new applications far beyond the basic phone call. These requirements consume far more power, negatively impacting areas like transmission quality and available talk time.
Kopin's new technology is significant because it lowers the voltage needed to run digital cell phones. The company's gallium arsenide An alloy of gallium and arsenic compound (GaAs) that is used as the base material for chips. Several times faster than silicon, it is used in high frequency applications such as cellphones, DVD players and fiber optics. heterojunction bipolar transistors The heterojunction bipolar transistor (HBT) is an improvement of the bipolar junction transistor (BJT) that can handle signals of very high frequencies up to several hundred GHz. It is common in modern ultrafast circuits, mostly radio-frequency (RF) systems. (HBTs) - first introduced in 1996 - are built into one-third of the world's cell phones. Kopin's new GAIN-HBT transistors represent the second generation of HBT materials and will make possible improved battery life, signal quality, compactness and improved data transmission throughput for wireless handsets and networks.
The company detailed its breakthrough technology on January 22, 2003 in Okinawa, Japan at the Topical Workshop on Heterostructure Microelectronics (TWHM TWHM Topical Workshop on Heterostructure Microelectronics ), an international technical conference. The transistor, described in a paper titled "Low Turn-On GaInAsN/InGaP Tunneling Collector DHBTs," combines Kopin's next-generation GAIN-HBT technology with a unique collector design to increase power added efficiency (PAE PAE Physical Address Extension
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PAE Port Access Entity (IEEE 802. ) to as much as 20% higher; and provides two to five times better linearity.
"Kopin's graded GAIN-HBT technology offers major improvements for the most important power amplifier Power amplifier
The final stage in multistage amplifiers, such as audio amplifiers and radio transmitters, designed to deliver appreciable power to the load. parameters," said Dr. John C. C. Fan, Kopin's founder and chief executive officer. "Better yet, our GAIN-HBT transistor is designed for existing GaAs epitaxial and IC fabrication fabrication (fab´rikā´shn),
n the construction or making of a restoration. processes; therefore, it is a `plug and play' platform. In 1996, Kopin introduced AlGaAs HBTs products to the market. In 1999, we introduced a derivative of that platform, InGaP HBTs. Though these are quite complex vertical transistor structures, they are really first-generation HBTs. This new transistor platform truly represents the second generation of HBTs because of the new material (Gallium Arsenide Indium Nitride nitride
Any of a class of chemical compounds in which nitrogen is combined with an element of similar or lower electronegativity, such as boron, silicon, and most metals. Some examples of nitrides include boron nitride, calcium nitride, aluminum nitride, and cyanogen. - GAIN) used in the base layer, which is the most important part of the vertical transistor." Kopin has been developing the GAIN-HBT products for several years, and they are now available for design-in for both four-inch and six-inch power amplifier process lines.
"By combining base layer energy-gap engineering with InGaP emitters, we can engineer our GAIN-HBT transistors to improve the key power amplifier parameters over conventional InGaP and AlGaAs HBTs, including lower turn-on and offset voltages, lower power consumption, better linearity characteristics, improved efficiency and more stable operation over temperature," stated Dr. Roger E. Welser, Kopin's Director of Transistor Technology. "It's a very versatile platform because of the large selection of materials and transistor structures. The work presented at TWHM represents another major step in the implementation of our GAIN-HBT roadmap, since the inclusion of the unique collector design would further increase the power amplifier efficiency. A 40% increase of circuit speed and a 20% higher PAE may now be possible over conventional HBTs."
Founded in 1984, Kopin (Nasdaq: KOPN) is pioneering the use of the Wafer Engineering Process(TM) in communications, consumer and military technology. The company supplies the world's largest electronics manufacturers and government agencies with breakthrough semiconductor products - from dime-sized microdisplays to ultra-efficient transistors - that enhance the delivery and presentation of voice, video and data. Kopin technology is currently used in one-third of the world's cell phones and nearly one-third of the world's camcorders. For more information, please visit Kopin's Web site at www.kopin.com.
Statements in this news release about Kopin Corporation's GAIN-HBTs are made under "Safe Harbor Safe Harbor
1. A legal provision to reduce or eliminate liability as long as good faith is demonstrated.
2. A form of shark repellent implemented by a target company acquiring a business that is so poorly regulated that the target itself is less attractive. " provisions of the Private Securities Litigation Reform Act The Private Securities Litigation Reform Act of 1995 (PSLRA) implemented several significant substantive changes affecting certain cases brought under the federal securities laws, including changes related to pleading, discovery, liability, class representation and awards fees and of 1995. These statements involve a number of risks and uncertainties that could materially affect future results. Among these risk factors are general economic and business conditions and growth in the GaAs integrated circuit integrated circuit (IC), electronic circuit built on a semiconductor substrate, usually one of single-crystal silicon. The circuit, often called a chip, is packaged in a hermetically sealed case or a nonhermetic plastic capsule, with leads extending from it for and materials industries, sales of wireless handsets, the impact of competitive products and pricing, availability of integrated circuit fabrication facilities, the Company's ability to successfully expand its production facilities, cost and yields of HBT transistor wafers, loss of significant customers, acceptance of the Company's products, continuation of strategic relationships, and other risk factors and cautionary statements listed from time to time in the Company's periodic reports and registration statements filed with the Securities and Exchange Commission including, but not limited to, the Company's Annual Report on Form 10-K Form 10-K
A report required by the SEC from exchange-listed companies that provides for annual disclosure of certain financial information.
See 10-K. for the year ended December 31, 2001, and the Quarterly Report on Form 10-Q Form 10-Q
See 10-Q. for the period ended September 28, 2002.