Kopin Presents Results of a New High-Efficiency, Low-Voltage Transistor for Wireless Market.

Business/Technology Editors

TAUNTON, Mass.--(BUSINESS WIRE)--Jan. 23, 2003

Second-generation HBT platform provides power savings and improved

performance for wireless applications

Kopin Corporation (Nasdaq: KOPN), today announced a breakthrough technology called GAIN-HBT that will give digital cell phones significantly reduced power consumption, longer battery life and improved signal quality.

As consumers increasingly migrate to advanced digital cell phones, they are becoming "power hungry." These devices - especially the new color digital cell phones - are often left on so that users can receive data and use a host of new applications far beyond the basic phone call. These requirements consume far more power, negatively impacting areas like transmission quality and available talk time.

Kopin's new technology is significant because it lowers the voltage needed to run digital cell phones. The company's gallium arsenide heterojunction bipolar transistors (HBTs) - first introduced in 1996 - are built into one-third of the world's cell phones. Kopin's new GAIN-HBT transistors represent the second generation of HBT materials and will make possible improved battery life, signal quality, compactness and improved data transmission throughput for wireless handsets and networks.

The company detailed its breakthrough technology on January 22, 2003 in Okinawa, Japan at the Topical Workshop on Heterostructure Microelectronics (TWHM), an international technical conference. The transistor, described in a paper titled "Low Turn-On GaInAsN/InGaP Tunneling Collector DHBTs," combines Kopin's next-generation GAIN-HBT technology with a unique collector design to increase power added efficiency (PAE) to as much as 20% higher; and provides two to five times better linearity.

"Kopin's graded GAIN-HBT technology offers major improvements for the most important power amplifier parameters," said Dr. John C. C. Fan, Kopin's founder and chief executive officer. "Better yet, our GAIN-HBT transistor is designed for existing GaAs epitaxial and IC fabrication processes; therefore, it is a `plug and play' platform. In 1996, Kopin introduced AlGaAs HBTs products to the market. In 1999, we introduced a derivative of that platform, InGaP HBTs. Though these are quite complex vertical transistor structures, they are really first-generation HBTs. This new transistor platform truly represents the second generation of HBTs because of the new material (Gallium Arsenide Indium Nitride - GAIN) used in the base layer, which is the most important part of the vertical transistor." Kopin has been developing the GAIN-HBT products for several years, and they are now available for design-in for both four-inch and six-inch power amplifier process lines.

"By combining base layer energy-gap engineering with InGaP emitters, we can engineer our GAIN-HBT transistors to improve the key power amplifier parameters over conventional InGaP and AlGaAs HBTs, including lower turn-on and offset voltages, lower power consumption, better linearity characteristics, improved efficiency and more stable operation over temperature," stated Dr. Roger E. Welser, Kopin's Director of Transistor Technology. "It's a very versatile platform because of the large selection of materials and transistor structures. The work presented at TWHM represents another major step in the implementation of our GAIN-HBT roadmap, since the inclusion of the unique collector design would further increase the power amplifier efficiency. A 40% increase of circuit speed and a 20% higher PAE may now be possible over conventional HBTs."

About Kopin

Founded in 1984, Kopin (Nasdaq: KOPN) is pioneering the use of the Wafer Engineering Process(TM) in communications, consumer and military technology. The company supplies the world's largest electronics manufacturers and government agencies with breakthrough semiconductor products - from dime-sized microdisplays to ultra-efficient transistors - that enhance the delivery and presentation of voice, video and data. Kopin technology is currently used in one-third of the world's cell phones and nearly one-third of the world's camcorders. For more information, please visit Kopin's Web site at www.kopin.com.

Statements in this news release about Kopin Corporation's GAIN-HBTs are made under "Safe Harbor" provisions of the Private Securities Litigation Reform Act of 1995. These statements involve a number of risks and uncertainties that could materially affect future results. Among these risk factors are general economic and business conditions and growth in the GaAs integrated circuit and materials industries, sales of wireless handsets, the impact of competitive products and pricing, availability of integrated circuit fabrication facilities, the Company's ability to successfully expand its production facilities, cost and yields of HBT transistor wafers, loss of significant customers, acceptance of the Company's products, continuation of strategic relationships, and other risk factors and cautionary statements listed from time to time in the Company's periodic reports and registration statements filed with the Securities and Exchange Commission including, but not limited to, the Company's Annual Report on Form 10-K for the year ended December 31, 2001, and the Quarterly Report on Form 10-Q for the period ended September 28, 2002.