Kopin Announces Development of GaN Transistors for Next-Generation Power Amplifiers.

Company's New GaN HEMT Structure Qualified for Production by a Leader in Wireless Base Station Applications

TAUNTON, Mass. -- Kopin([R]) Corp. (NASDAQ: KOPN), the world's leading provider of HBTs (heterojunction bipolar transistors), today announced that it has developed GaN (Gallium Nitride) high electron mobility transistors (HEMTs) for use in the next generation of military, public mobile radio, WiMAX and WCDMA base station products. The total addressable market for these GaN infrastructure products is estimated to be as high as $1 billion annually, providing strong future revenue growth potential to both Kopin and its customers.

"As the world's largest supplier of epitaxial wafers grown by metal organic chemical vapor deposition, Kopin is committed to providing our customers with high-performance, high-quality GaN HEMT products by utilizing our infrastructure, 20 years of industry experience, and solid financial standing," said Dr. John C. C. Fan, Kopin's president and chief executive officer. "Since 2004, we have been working with several U.S. companies on the development of our GaN HEMT products, and we are delighted that a leader in GaN-enabled base station products has recently qualified these wafers for production."

Kopin has been enhancing the performance, reliability, and manufacturability of GaN transistor structures by capitalizing on its know-how in epitaxial growth of state-of-the-art GaN materials and its extensive experience with volume manufacturing of III-V materials. Kopin's GaN-based HEMT wafers exhibit excellent device characteristics with a high degree of thickness and compositional uniformity. Kopin's GaN transistor efforts have focused on utilizing silicon carbide substrates, although efforts have also been extended to other starting materials, including sapphire.

"The superior electrical properties of GaN enable transistors with unparalleled levels of high power densities over wide frequency ranges," said Dr. Hong Choi, Kopin's chief technology officer. "GaN HEMTs can provide higher efficiency, more compact solutions than competing technologies for a variety of commercial and military systems, including wireless base stations, X-band radar, millimeter-wave military communication links, and electronic warfare."

About Kopin

Kopin is a leading developer and manufacturer of telecommunications and digital imaging technologies that enhance the delivery and presentation of video, voice and data. The Company has combined advanced AMLCD and integrated circuit technology to produce its CyberDisplay family of award-winning ultra-small, high-density imaging devices for camcorders, digital cameras, next-generation Internet wireless handsets and other consumer and defense electronics. Telecommunication providers are using Kopin's heterojunction bipolar transistor (HBT) wafers in wireless digital phones and high-speed Internet data transmission. For more information, please visit Kopin's Web site at www.kopin.com.

Kopin and The NanoSemiconductor Company are registered trademarks of Kopin Corporation.

Statements in this news release about GaN Technology may be considered "forward-looking" statements under the "Safe Harbor" provisions of the Private Securities Litigation Reform Act of 1995. These statements involve a number of risks and uncertainties that could materially affect future results. These risk factors include: the future demand for GaN HEMTs; the potential for competing technologies to offer superior performance or be offered at a lower cost than GaN products, our ability to manufacture GaN products; general economic and business conditions; changes in business conditions within the wireless component industry; the impact of competitive products and pricing; availability of third-party components; customer qualification of our GaN manufacturing processes; and other risk factors and cautionary statements listed in Kopin's periodic reports and registration statements filed with the Securities and Exchange Commission. These include, but are not limited to, the Company's Form 10-Q for the three-month period ended July 1, 2006 and Annual Report on Form 10-K for the fiscal year ended December 31, 2005.

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Kopin - The NanoSemiconductor Company([R])