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Japan: Fujitsu Develops World's First Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset.


Fujitsu Limited and Fujitsu Laboratories Ltd. announced today the development of the world's first gallium-nitride(1)HEMT See FET. (2)-based transceiver amplifier chipset for broadband wireless See wireless broadband.  transmission equipment operating in the millimeter bandwidth, the range of 70 to 100 GHz, for which widespread usage is expected to grow.

The new transceiver amplifier chipset features a GaN HEMT-based high-output transmitter amplifier and high-sensitivity receiver amplifier. The transmitter amplifier achieves the world's highest level of performance with output of 350 mW, while the receiver amplifier features the world's highest level of signal gain at 310 times (310x) operating in the W-band(3) with a low noise figure(4) of 3.8 decibels (dB). Compared to gallium-arsenide (GaAs)-based technology, the new GaN HEMT-based amplifier chipset for the millimeter band is anticipated to offer output that is increased by approximately four-fold (4x), and a noise figure decreased by 40%, while transmission ranges are expected to be extended by roughly three-fold (3x).

Used as an alternative to fiber-optic cabling, Fujitsu's new GaN HEMT-based millimeter-band transceiver amplifier will help bridge the digital divide(5) for wireless communications wireless communications

System using radio-frequency, infrared, microwave, or other types of electromagnetic or acoustic waves in place of wires, cables, or fibre optics to transmit signals or data.
, by making communications equipment for trunk lines and ultra-high-speed fixed wireless access higher in quality and more compact, ultimately making wireless broadband High-speed wireless transmission of data. What is "high" speed is always a changing number. Wireless systems are typically slower than land-based, wireline networks. In the past, wireless broadband started at 250 Kbps, whereas land-based broadband was generally considered to start at T1  more practical.

Details of this technology were presented at the European Microwave Integrated Circuits Integrated circuits

Miniature electronic circuits produced within and upon a single semiconductor crystal, usually silicon. Integrated circuits range in complexity from simple logic circuits and amplifiers, about 1/20 in. (1.
 Conference (EuMIC), being held from September 28 to 29 in Rome. Part of this research was conducted as part of the Research and Development Project for Expansion of Radio Spectrum Resources sponsored by Japan's Ministry of Internal Affairs and Communications Ministry of Internal Affairs and Communications (総務省 Sōmushō .

Copyright : Euclid Infotech Pvt. Ltd.

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Publication:TendersInfo
Date:Oct 1, 2009
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