International Rectifier Introduces DC Bus Converter Chip Set Re-Defining Distributed Power Architecture for Networking and Communication Systems.Business Editors
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International Rectifier International Rectifier Corp. (NYSE: IRF) is a manufacturer of power semiconductors (MOSFET, IGBT, diodes and thyristors), located in El Segundo, California, USA. It has a market capitalization of 2.48 billion USD and is listed on the S&P Midcap 400. , IR(r) (NYSE NYSE
See: New York Stock Exchange :IRF IRF Interferon Regulatory Factor
IRF International Religious Freedom
IRF Institut for Rationel Farmakoterapi (German)
IRF Inherited Rights Filter (Novell)
IRF Inherited Rights Filter ), today unveiled the first group of products in the family of DC Bus Converter Chip Sets that re-define the underlying distributed power architecture for 48V-input, 150W board-mounted power (BMP (1) (BitMaP) Also known as a "bump" file, it is the native, bitmapped graphics format in Windows. A BMP can be saved in several color options: 1-, 4-, 8- and 24-bit color provide 2, 16, 256 and 16,000,000 colors respectively. BMP files use the .BMP or . ) converters used in telecom and networking systems.
IR's DC Bus Converter Chip Set architecture establishes benchmarks for overall efficiency, power density and simplicity, delivering more than 96% efficiency at 20A/150Wout in a circuit footprint less than 1.7 square inches. The Chip Set enables a 53% size reduction when compared to industry-standard quarter-brick form factors and slashes component count in isolated converters from approximately 50 components to 20.
The new Chip Set consists of a single IR2085S control IC and one pair each IRF7493 primary- and IRF6603 secondary-side HEXFET HEXFET Hexagonal Field Effect Transistor (r) power MOSFETs, plus the IRF7380 for primary-side bias and an IRF9956 for the secondary-side gate clamp. The Chip Set is designed for the isolated front-end of two-stage distributed power architectures (DPA DPA - Data Protection Act ) with an intermediate bus voltage feeding non-isolated point-of-load (POL) converters.
Two-stage DPA schemes do not require a tightly regulated intermediate bus voltage, since the POL will typically accept a relatively wide input voltage, and the POL provides the needed regulation to the load. In addition, multiple DC Bus Converter Chip Sets can be placed in parallel for higher power Higher power is a term used in a 12-step program, such as Alcoholics Anonymous, to describe "a power greater than yourself." Although many participants equate their higher power with God, a belief in God or in formal religion is not mandatory; the higher power is intended as a requirements.
"IR's DC Bus Converter Chip Set architecture removes the need for a regulated output at the intermediate stage, eliminating expensive feedback circuitry. Therefore, the overall solution is less complex, the component count is reduced and the board space needed for the conversion is smaller, while achieving over 96% efficiency," said Carl Smith, Marketing Manager for Networking and Telecommunication Products at International Rectifier.
The IR2085S control IC is the heart of the DC Bus Converter Chip Set architecture, based around a 50% fixed duty cycle, self-oscillating control scheme. The IR2085S replaces two SO-8 packaged devices, and is optimized for DPA applications. Features include an integrated soft-start capacitor that gradually increases duty cycle from zero to 50% for 5msec to limit in-rush current during start up, and maintains equal pulse widths for the high- and low-side MOSFETs throughout the start-up sequence.
The low- and high-side pulses for the half-bridge are matched to within 25ns to prevent transformer imbalances during operation. Other features include 1A gate drive current optimized to work with IR's next generation low charge primary side MOSFETs, and includes adjustable dead-time from 50nsec to 200nsec to protect against shoot-through current. The deadtime can also be adjusted to limit the amount of body diode conduction on the secondary side, therefore maximizing efficiency.
The IR2085S has programmable switching frequency up to 500kHz for design flexibility. Higher switching frequency decreases output voltage ripple and allows use of smaller, lower loss magnetic components. Circuit designers can control switching frequency and deadtime independently with just two external components to customize circuits for their particular application.
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(operating system, compiler) bootstrap - To load and initialise the operating system on a computer. Normally abbreviated to "boot". From the curious expression "to pull oneself up by one's bootstraps", one of the legendary feats of Baron von Munchhausen. operation up to 100V DC and VCC An electronics designation that refers to voltage from a power supply connected to the "collector" terminal of a bipolar transistor. In an NPN bipolar (BJT) transistor, it would be +Vcc, while in a PNP transistor, it would be -Vcc. supply under-voltage lockout lockout, intentional closing up of a company, factory, or shop by an employer to prevent employees from working during a strike or labor dispute. The term lockout is included. The IR2085S uses a new high voltage The term high voltage characterizes electrical circuits, in which the voltage used is the cause of particular safety concerns and insulation requirements. High voltage is used in electrical power distribution, in cathode ray tubes, to generate X-rays and particle beams, to , high frequency level shift technology with high dv/dt immunity. The immunity is in the range of 50V/nsec to prevent unwanted turn on of the lower MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged in the half-bridge, and enables faster switching speed.
On the primary side, two 80V-rated IRF7493 MOSFETs in the SO-8 package are employed in a half-bridge configuration. It has low combined on-state resistance and gate charge, at 15mOhm(max) at 10V gate-to-source voltage, 31nC total gate charge and 12nC gate-to-drain charge for maximum switching performance.
On the secondary side, two 30V-rated IRF6603 MOSFETs in the DirectFET(tm) package are used in a self-driven synchronous rectification topology. It has low on-state resistance and a thermally enhanced package, at 3.9mOhm(max) at 10V gate-to-source voltage, and 1 degrees Celsius per watt thermal resistance to the PCB PCB: see polychlorinated biphenyl.
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Any of a class of highly stable organic compounds prepared by the reaction of chlorine with biphenyl, a two-ring compound. to deliver maximum current capability and efficiency.
IR's new architecture uses two biasing components. The IRF7380 dual 80V MOSFET has close threshold voltage The threshold voltage of a MOSFET is usually defined as the gate voltage where a depletion region forms in the substrate (body) of the transistor. In an NMOS the substrate of the transistor is composed of p-type silicon which has more positively charged electron holes compared to matching and is used on the primary side in a novel biasing scheme. The IRF9956 secondary side dual MOSFET provides a gate clamp for the secondary-side synchronous rectification MOSFETs, clamping the drive voltage to 7.5V.
Data sheets for the new DC Bus Converter Chip Set are posted on the IR Web site:
IR2085S: Primary-side control IC, fixed 50% duty cycle, self-oscillating (1 per chip set): http://www.irf.com/product-info/datasheets/data/ir2085s.pdf
IRF7493: Primary-side MOSFET used in half-bridge (2 per chip set): http://www.irf.com/product-info/datasheets/data/irf7493.pdf
IRF6603: Secondary-side MOSFET for self-driven sync rectification (2 per chip set): http://www.irf.com/product-info/datasheets/data/irf6603.pdf
IRF7380: Primary-side MOSFET for primary-side bias (1 per chip set): http://www.irf.com/product-info/datasheets/data/irf7380.pdf
IRF9956: Secondary-side MOSFET for gate clamp bias (1 per chip set): http://www.irf.com/product-info/datasheets/data/irf9956.pdf
Pricing and Availability
The DC Bus Converter Chip Set samples and evaluation tools are available now. Production release for the Chip Set is June 2003. Pricing is US $7.67 for each Chip Set in 10,000-unit quantities.
About International Rectifier
International Rectifier is recognized as a leading supplier of power semiconductors and systems solutions. IR's patented HEXFET(r) power MOSFETs, IGBTs and high-voltage ICs make electricity work smarter in industrial automation and controls, automotive electrical systems Automotive electrical system
The system in a motor vehicle that furnishes the electrical energy to crank the engine for starting, recharge the battery after cranking, create the high-voltage sparks to fire the compressed air-fuel charges, and power the , consumer electronics, computers and peripherals, telecommunications, lighting and satellite/launch vehicle applications.
IR(r) and HEXFET(r) are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.
For more information, contact Wayne Yoshida, firstname.lastname@example.org, 310-252-7726.