International Rectifier Introduces 60V DirectFET MOSFET Improving Conduction Losses by up to 30%.EL SEGUNDO El Segundo (ĕl sēgŭn`dō), industrial city (1990 pop. 15,223), Los Angeles co., S Calif., on Santa Monica Bay; inc. 1917. Its products include navigation and computer systems, aircraft parts, office machines, telephone apparatus, and , Calif. -- International Rectifier International Rectifier Corp. (NYSE: IRF) is a manufacturer of power semiconductors (MOSFET, IGBT, diodes and thyristors), located in El Segundo, California, USA. It has a market capitalization of 2.48 billion USD and is listed on the S&P Midcap 400. , IR(r) (NYSE NYSE See: New York Stock Exchange : IRF IRF Interferon Regulatory Factor IRF International Religious Freedom IRF Institut for Rationel Farmakoterapi (German) IRF Inherited Rights Filter (Novell) IRF Inherited Rights Filter ), a world leader in power management technology, today introduced the IRF6648, a 60V DirectFET(tm) power MOSFET A Power MOSFET is a specific type of Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) designed to handle large powers. Compared to the other power semiconductor devices (IGBT, Thyristor... featuring a maximum on-state resistance of 7.0mOhm (VGS VGS Videregående Skole (Norwegian school) VGS Virtual Game Station VGS Voodoo Glow Skulls (Ska band) VGS Video Game System VGS Volunteer Gliding School VGS Voltage Gate to Source VGS Velocity Gate Stealer =10V) which enables up to 30% lower device conduction losses compared to competitive solutions. A single IRF6648 in the SO-8 footprint can deliver performance similar to two competing "enhanced SO-8" devices operating in parallel. These devices are ideal for isolated DC-DC DC-DC Direct Current to Direct Current (power conversion) converters commonly used in telecommunications and networking systems. When the IRF6648 is used on the secondary side of a regulated 48V input, 12V output, 240W isolated converter the power density of 72W per square inch can be increased an additional 15%. This is enabled by taking advantage of the dual-sided cooling capability of the DirectFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged packaging technology with the addition of a heat sink A material that absorbs heat. Typically made of aluminum, heat sinks are widely used in amplifiers and other electronic devices that build up heat. Small heat sinks are the most economical method for cooling microprocessors and other chips. . "As IR expands their mid-voltage DirectFET MOSFET portfolio, power supply designers have more options for improving performance in both primary- and secondary-side sockets in isolated DC-DC converters," said Carl Smith, marketing manager for Networking and Telecommunication Products at International Rectifier. "The IRF6648 is a versatile device. It can be used in secondary-side, synchronous rectification sockets in 36V to 75V input isolated DC-DC converters; primary-side, half- and full-bridge isolated DC-DC bus converters; 24V input, primary-side, forward active clamp circuits and 48V output, AC-DC active ORing systems," Smith added. Patented DirectFET(tm) Packaging Technology International Rectifier's patented DirectFET MOSFET packages present a whole new set of design advantages not previously delivered by standard plastic discrete packages. Their metal can construction enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC-DC buck converters powering advanced microprocessors. In addition, devices in the DirectFET package are compliant with the Restriction of Hazardous Substances Directive The Directive on the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment 2002/95/EC[1] (commonly referred to as the Restriction of Hazardous Substances Directive or RoHS (RoHS). Data sheets for these devices are available on the International Rectifier Web site: IRF6648: http://www.irf.com/product-info/datasheets/data/irf6648.pdf Design Tools and Application Notes AN-1035 - Board Mounting Guidelines for DirectFET(tm) MOSFETs AN-1050 - Materials & Practices for DirectFET(tm) MOSFETs AN-1059 - Thermal modeling and Characterization for DirectFET(tm) MOSFETs The DirectFET MOSFET online Discovery Center gives designers a deeper understanding of how to use the unique advantages of DirectFET devices and how they increase electrical and thermal performance. Go to http://www.irf.com/product-info/directfet/dfdiscovery/ Availability and Pricing The IRF6648 DirectFET(tm) MOSFET is available immediately. Pricing is US $1.29 each in 10,000-unit quantities. Prices are subject to change. About International Rectifier International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR's power management benchmarks to power their next generation products. For more information, go to www.irf.com. Patent and Trademark Notice IR's proprietary DirectFET technology is covered by US Patents 6624522, 6784540 and multiple other US and foreign pending patent applications. DirectFET(tm) is a trademark of International Rectifier Corporation. IR(r) and HEXFET HEXFET Hexagonal Field Effect Transistor (r) are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders. |
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