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International Rectifier HEXFET America Wafer Fabrication Facility Granted JANS Certification.


Technology Editors

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Nov. 2, 2001

International Rectifier, IR(R) (NYSE NYSE

See: New York Stock Exchange
:IRF), today announced that the Defense Supply Center Columbus (DSCC DSCC Democratic Senatorial Campaign Committee
DSCC Defense Supply Center Columbus (US DoD)
DSCC Dyersburg State Community College (Dyersburg, TN) 
) has granted JANS certification for IR's HEXFET HEXFET Hexagonal Field Effect Transistor  America (HEXAM) wafer fabrication facility located in Temecula, California.

The wafer facility is certified for compliance with MIL-PRF-19500. Compliance means that HEXFET America is certified to produce JANS N- and P-channel power MOSFET wafers for use in high-reliability applications.

Richard Southwell, International Rectifier Hi-Rel Components Group Marketing Manager, said, "JANS is the highest quality level assigned by MIL-PRF-19500, and MIL-PRF-19500 is the performance specification currently used by nearly every space-level customer. Earning JANS certification reinforces IR's position as a premier supplier of hi-rel products." In addition, other quality levels such as JANTXV and JANTX JANTX Joint Army-Navy Technical Exchange  may also be supplied by the HEXFET America fabrication facility.

HEXFET America is IR's high volume wafer fabrication supplier of power Metal Oxide Semiconductor Field Effect Transistor (electronics) Metal Oxide Semiconductor Field Effect Transistor - (MOSFET) A Field Effect Transistor in which the conducting channel is insulated from the gate terminal by a layer of oxide. Therefore it does not conduct even if a reverse voltage is applied to the gate.  (MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged ), Insulated Gate Bipolar Transistor (IGBT) and other semiconductor switch technologies. IR's Hi-Rel Components Group will act as the supplier of JANS dice and finished (screened) products. Wafer lots selected for JANS applications will be analyzed for compliance to JANS criteria by IR's Hi-Rel Components Group.

About International Rectifier Hi-Rel Components

and Subsystems Group

International Rectifier Hi-Rel Components and Subsystems Group is recognized as a leading supplier of radiation-hardened MOSFETs and multi-chip module DC-DC DC-DC Direct Current to Direct Current (power conversion)  converters, radiation-tolerant and industry standard voltage regulators, power modules and other discrete semiconductors. IR products are used in aerospace, commercial aircraft, military, semiconductor manufacturing equipment, industrial controls and communication applications. More information on IR's Hi-Rel Components and Subsystems Group can be found at http://hirel.irf.com/

Trademark Notice

HEXFET(R) and IR(R) are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.
COPYRIGHT 2001 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2001, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Date:Nov 2, 2001
Words:301
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