International Rectifier's New 200V DirectFET(R) MOSFET Achieves up to 95 Percent Efficiency and Shrinks Footprint.EL SEGUNDO El Segundo (ĕl sēgŭn`dō), industrial city (1990 pop. 15,223), Los Angeles co., S Calif., on Santa Monica Bay; inc. 1917. Its products include navigation and computer systems, aircraft parts, office machines, telephone apparatus, and , Calif. -- International Rectifier International Rectifier Corp. (NYSE: IRF) is a manufacturer of power semiconductors (MOSFET, IGBT, diodes and thyristors), located in El Segundo, California, USA. It has a market capitalization of 2.48 billion USD and is listed on the S&P Midcap 400. , IR([R]) (NYSE NYSE See: New York Stock Exchange :IRF IRF Interferon Regulatory Factor IRF International Religious Freedom IRF Institut for Rationel Farmakoterapi (German) IRF Inherited Rights Filter (Novell) IRF Inherited Rights Filter ), a world leader in power management technology, today introduced the IRF6641TRPbF Power MOSFET A Power MOSFET is a specific type of Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) designed to handle large powers. Compared to the other power semiconductor devices (IGBT, Thyristor... featuring IR's benchmark DirectFET package technology paired with IR's latest 200V HEXFET HEXFET Hexagonal Field Effect Transistor ([R]) MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged silicon technology to achieve 95 percent efficiency. IR's new 200V DirectFET device is designed for use in isolated DC-DC DC-DC Direct Current to Direct Current (power conversion) converter designs operating from a universal input range (36V to 75V). With its extremely low typical 10V RDS-on of 51 milliohms and reduced gate charge, the IRF6641TRPbF is ideally suited as a synchronous rectifier rectifier, component of an electric circuit used to change alternating current to direct current. Rectifiers are made in various forms, all operating on the principle that current passes through them freely in one direction but only slightly or not at all in the MOSFET in high frequency, high efficiency DC-DC converters powering high current loads, the latest generation of intermediate bus converters, DC motor drives, and even 48-volt inverters used to convert power from wind turbines. It is also suitable for synchronous rectification in high current AC-DC converters used to power computers and telecom servers operating from a 48-volt universal input voltage range. "Our new 200V DirectFET MOSFET achieves a current rating up to 25 amperes in a footprint the size of an SO-8 with only a 0.7 mm profile, while minimizing gate charge and package inductance inductance, quantity that measures the electromagnetic induction of an electric circuit component; it is a property of the component itself rather than of the circuit as a whole. to reduce both conduction and switching losses," said Carl Blake, director of Technical Marketing for IR's Discrete Products. "The board space savings alone of one DirectFET MOSFET versus two or three SO-8 devices is more than 50 percent," adds Blake. IR's new device offers superior performance in many applications. In comparing the in-circuit efficiency of IRF6641TRPbF to other enhanced SO-8 devices in secondary-side synchronous rectification sockets, the new DirectFET device delivers a 0.4 percent efficiency improvement when the same numbers of enhanced SO-8 devices are used per socket. Additionally, IR's new device provides the same seven-amp, full-load efficiency when the numbers of enhanced SO-8 devices are doubled-up at each socket. In this same analysis, the MOSFET temperatures are lowest in the circuit using two IRF6641TRPBF devices per socket. The device has a common MZ footprint allowing an easy migration path to other mid-voltage DirectFET MOSFETs such as the lower voltage, 100-volt IRF6662 device in applications where the current levels increase and lower voltage is acceptable. Data sheets and additional information can be found on the Web at http://www.irf.com/whats-new/nr061026.html. Patented DirectFET Packaging Technology International Rectifier's patented DirectFET MOSFET packages present a whole new set of design advantages not previously delivered by standard plastic discrete packages. Their metal can construction enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC-DC buck converters powering advanced microprocessors. In addition, devices in the DirectFET package are compliant with the Restriction of Hazardous Substances Directive The Directive on the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment 2002/95/EC[1] (commonly referred to as the Restriction of Hazardous Substances Directive or RoHS (RoHS). Availability and Pricing The new IRF6641TRPbF DirectFET MOSFET, shipped in tape and reel, is available immediately. Pricing is US $1.24 each in 10,000-unit quantities. Prices are subject to change. About International Rectifier International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR's power management benchmarks to power their next generation products. For more information, go to www.irf.com. Patent and Trademark Notice IR's proprietary DirectFET technology is covered by US Patents 6624522, 6784540 and multiple other US and foreign pending patent applications. DirectFET([R]), HEXFET([R]), and IR([R]) are trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders. |
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