Intel and Numonyx Achieve Research Milestone With Stacked, Cross Point Phase Change Memory Technology.New Research Discovery Paves Way for Scalable, Higher Density Phase Change Memory Products SANTA CLARA Santa Clara, city, Cuba Santa Clara (sän`tä klä`rä), city (1994 est. pop. 217,000), capital of Villa Clara prov., central Cuba. , Calif. & GENEVA -- Intel Corporation (company) Intel Corporation - A US microelectronics manufacturer. They produced the Intel 4004, Intel 8080, Intel 8086, Intel 80186, Intel 80286, Intel 80386, Intel 486 and Pentium microprocessor families as well as many other integrated circuits and personal computer networking and Numonyx B.V. today announced a key breakthrough in the research of phase change memory (PCM (1) See phase change memory. (2) (Plug Compatible Manufacturer) An organization that makes a computer or electronic device that is compatible with an existing machine. ), a new non-volatile memory technology that combines many of the benefits of today's various memory types. For the first time, researchers have demonstrated a 64Mb test chip that enables the ability to stack, or place, multiple layers of PCM arrays within a single die. These findings pave the way for building memory devices with greater capacity, lower power consumption and optimal space savings for random access non-volatile memory and storage applications. The achievements are a result of an ongoing joint research program between Numonyx and Intel that has been focusing on the exploration of multi-layered or stacked PCM cell arrays. Intel and Numonyx researchers are now able to demonstrate a vertically integrated memory cell - called PCMS PCMS Purchase Card Management System PCMS Pinon Canyon Maneuver Site (Fort Carson, CO) PCMS Project Configuration Management System PCMS Patient Care Management System PCMS Passive Countermeasure System (phase change memory and switch). PCMS is comprised of one PCM element layered with a newly used Ovonic o·von·ic adj. Of or relating to a device whose operation is based on the Ovshinsky effect. [Ov(shinsky effect) + (electr)onic.] Threshold Switch (OTS See Office of Thrift Supervision. ) in a true cross point array. The ability to layer or stack arrays of PCMS provides the scalability to higher memory densities while maintaining the performance characteristics of PCM, a challenge that is becoming increasingly more difficult to maintain with traditional memory technologies. "We continue to develop the technology pipeline for memories in order to advance the computing platform," said Al Fazio, Intel Fellow and director, memory technology development. "We are encouraged by this research milestone and see future memory technologies, such as PCMS, as critical for extending the role of memory in computing solutions and in expanding the capabilities for performance and memory scaling." "The results are extremely promising," said Greg Atwood, senior technology fellow at Numonyx. "The results show the potential for higher density, scalable arrays and NAND-like usage models for PCM products in the future. This is important as traditional flash memory technologies face certain physical limits and reliability issues, yet demand for memory continues to rise in everything from mobile phones to data centers." Memory cells are built by stacking a storage element and a selector, with several cells creating memory arrays. Intel and Numonyx researchers were able to deploy a thin film, two-terminal OTS as the selector, matching the physical and electrical properties for PCM scaling. With the compatibility of thin-film PCMS, multiple layers of cross point memory arrays are now possible. Once integrated together and embedded in a true cross point array, layered arrays are combined with CMOS (Complementary Metal Oxide Semiconductor) Pronounced "c-moss." The most widely used integrated circuit design. It is found in almost every electronic product from handheld devices to mainframes. circuits for decoding, sensing and logic functions. More information about the memory cell, cross point array, experiment and results will be published in a joint paper titled "A Stackable Cross Point Phase Change Memory," and will be presented at the 2009 International Electron Devices Meeting The International Electron Devices Meeting is an annual conference held alternatively in San Francisco, California and Washington D.C. Established in 1954, IEDM is the world's main forum on advancement in semiconductor and electronic devices. in Baltimore, Md., on Dec. 9. The paper is co-authored by Intel and Numonyx technologists and will be presented by DerChang Kau, Intel senior principal engineer. About Intel Intel (NASDAQ NASDAQ in full National Association of Securities Dealers Automated Quotations U.S. market for over-the-counter securities. Established in 1971 by the National Association of Securities Dealers (NASD), NASDAQ is an automated quotation system that reports on : INTC INTC Intel (NASDAQ symbol) INTC Intercept INTC Interrupt Controller ), the world leader in silicon innovation, develops technologies, products and initiatives to continually advance how people work and live. Additional information about Intel is available at www.intel.com/pressroom and blogs.intel.com. About Numonyx Numonyx provides a full complement of integrated NOR, NAND (Not AND) A Boolean logic operation that is true if any single input is false. Two-input NAND gates are often used as the sole logic element on gate array chips, because all Boolean operations can be created from NAND gates. See flash memory. , RAM and Phase Change non-volatile memory technologies and products to meet the increasingly sophisticated needs of customers in the cellular, data and embedded markets. Numonyx is dedicated to providing high density, low power memory technologies and packaging solutions to a global base of customers. Additional information about Numonyx is available at www.numonyx.com. Intel is a trademark of Intel Corporation in the United States and other countries. Numonyx is a registered trademark of Numonyx BV. |
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