Infineon Technologies and Micron Technology, Inc., Announce RLDRAM II Specification.

Business Editors/High-Tech Writers

BOISE, Idaho & MUNICH, Germany--(BUSINESS WIRE)--May 12, 2003

Next-Generation, High-bandwidth Memory Architecture Targets

Communication Data Storage Applications

Infineon Technologies and Micron Technology, Inc. (NYSE:MU), today announced the release of the complete specification for reduced latency DRAM II (RLDRAM(TM) II) architecture. Operating at speeds of up to 400 MHz, RLDRAM II products are the second-generation, ultra high-speed double data rate (DDR) SDRAM that combines fast random access with extremely high bandwidth and high density targeting communication and data storage applications. Datasheets for the 288Mb RLDRAM II devices are now available on the RLDRAM web site, www.rldram.com.

RLDRAM architecture is designed to meet the memory requirements of today's high-bandwidth communication applications. The device's eight-bank architecture is optimized for high speed and achieves a peak bandwidth of 28.8 gigabit per second (Gbps) using a 36-bit interface and a 400 MHz system clock. RLDRAM II boasts a low latency and random cycle time (tRC) of 20ns providing a higher data throughput. Additional advantages of the RLDRAM II feature set include; on-die termination (ODT), multiplexed or non-multiplexed addressing, on-chip delay lock loop (DLL), common or separate I/O and programmable output impedance and a power efficient 1.8V core. These features provide designers with increased design flexibility, balanced READ and WRITE ratio and the elimination of bus turnaround contention; as well as a simplified design-in process.

"RLDRAM II devices are an excellent solution to enable high-speed Ethernet and next-generation networking system designs to achieve up to 10 Gbps to 40 Gbps data rates," said Deb Matus, Micron's DRAM Marketing Manager for Networking and Communications. "We continue to see more and more support for this technology throughout the market. Applications using RLDRAM products include networking, consumer devices, graphics and L3 Cache."

"The original RLDRAM devices offered a significant performance boost with unprecedented latency for high-speed networking designs," said Dr. Ernst Strasser, Marketing Director for Specialty DRAM Products at Infineon Technologies. "RLDRAM II devices take another step forward, advancing performance once again for communications products and other applications requiring very high speed random data access and exceptional bandwidth. With publication of the RLDRAM II specification, Infineon and Micron signal our commitment to provide the industry with detailed design standards, a clear roadmap and the assurance of multiple sources from leading memory manufacturers. It's a significant benefit for the design community."

RLDRAM II devices are available in a standard 144-ball FBGA, 11mm X 18.5mm package to enable ultra high-speed data transfer rates and a simple upgrade path from former products. RLDRAM II devices are available in three configurations, 8 Meg x 36, 16 Meg x 18 and a 32 Meg x 9. Infineon and Micron co-developed the RLDRAM architecture, ensuring standardization, multi-sourcing, and functional compatibility.

"The combination of ultra-high bandwidth, speed, and device density delivered in the RLDRAM II devices will be very attractive to designers of advanced telecommunications equipment", said Rina Raman, Director of Applications for Xilinx' Advanced Products Group. "Xilinx has been working closely with Micron and Infineon and is pleased to provide controller solutions for RLDRAM II which include not only high-performance FPGAs but also an application note, reference design, and demonstration board to help designers characterize and quickly deploy RLDRAM II devices in their designs."

"RLDRAM II provides the memory bandwidth necessary for today's telecommunications designs," said Justin Cowling, Marketing Director of Altera's Intellectual Property Business Unit. "Altera has been working with Micron and Infineon to offer high-performance FPGA support for RLDRAM II by leveraging the dedicated DDR I/O circuitry in our Stratix device family."

Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for the automotive and industrial sectors, for applications in the wired communications markets, secure mobile solutions as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal year 2002 (ending September), the company achieved sales of Euro 5.21 billion with about 30,400 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). Further information is available at www.infineon.com.

Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, Flash memory, CMOS image sensors, other semiconductor components and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit its web site at www.micron.com.

RLDRAM is a trademark of Infineon Technologies AG in various countries, and is used by Micron Technology, Inc. under license from Infineon. RLDRAM devices comprise a new family of products developed by Infineon Technologies AG and Micron Technology, Inc. All other trademarks are the property of their respective owners.