Infineon Technologies Introduces New Triple Band Power Amplifier Module for Mobile Phone Applications.Business Editors/High-Tech Writers MUNICH, Germany--(BUSINESS WIRE)--Feb. 16, 2001 Infineon Technologies (NYSE NYSE See: New York Stock Exchange :IFX IFX - ["Type Reconstruction with First-Class Polymorphic Values", J. O'Toole et al, SIGPLAN Notices 24(7):207-217 (Jul 1989)]. )(FSE FSE 1. feline spongiform encephalopathy. 2. focal symmetrical encephalomalacia. :IFX), a world leader in chipsets for wireless applications, today introduced a power amplifier module for mobile phones used in 900, 1800 and 1900 MHz mobile networks. The new module will enable end-users to roam between GSM, PCN and PCS networks. With the new Low Temperature Co-fired Ceramics (LTCC LTCC Lake Tahoe Community College LTCC Low Temperature Cofired Ceramic LTCC Long Term Consumer Care, Inc. LTCC London Traffic Control Centre (UK) LTCC Long Term Care Consultation LTCC London Terminal Control Centre ) power amplifier module CGM20GTriB, Infineon extends its leadership and market position as a provider of advanced RF semiconductors for the telecommunications market. "Gallium Arsenide (GaAs) Power amplifier modules play a significant role in the fast growing wireless telecommunications market," explained Dr. Ewald Pettenpaul, general manager and vice president of the Gallium Arsenide Business Unit at Infineon Technologies. "To meet the increasing demand for GaAs power amplifiers, we have extended our production capacities at our backend facilities in Regensburg." The triple band LTCC-module is based on Infineon's GaAs-MESFET (Metal-Semiconductor Field-Effect Transistor) technology and will provide high reliability. Infineon's PA-module has a metal lid which provides excellent RF shielding which results in reduced costs for mobile phone manufacturers since this eliminates the need for an external metal-shielding in the phone itself. The ceramic footprint of 10x12 mm2 integrates additional functions including a Negative Voltage Generator (NVG) with an integrated oscillator oscillator Mechanical or electronic device that produces a back-and-forth periodic motion. A pendulum is a simple mechanical oscillator that swings with a constant amplitude, requiring the addition of energy at each swing only to compensate for the energy lost because of air , a Drain Switch, and, a Control-IC. The output power for GSM and PCN can be regulated with a positive control-voltage (Vapc) in the range of +0.2V and +2.5V so that only positive control signals are required to operate Infineon's PA-module. The maximum output power of 34.5dBm for GSM and 32.0dBm for PCN/PCS, measured at a supply voltage of 3.2V is achieved by a minimum Input power of only 3dBm. This low input power level will offer customers the possibility to use either cost effective VCOs (Voltage Controlled Oscillator) or Driver stages in their applications based on selected transmit architecture. To guarantee customers high yield in their phone mass production all electrical contacts of the module are visible for inspection after soldering. The CGM20GTriB is based on the CGM20G, a dual band GSM/PCN power amplifier module with GPRS (General Packet Radio Service) The first high-speed digital data service provided by cellular carriers that used the GSM technology. GPRS added a packet-switched channel to GSM, which uses dedicated, circuit-switched channels for voice conversations. class 12 capability. CGM20G supports maximum data rates of approximately 57.6 kbit/s in the up-link which is 4-times more than for standard GSM-phones with only 14.4 kbit/s. This data-rate is higher than for standard analog modems and leads to a breakthrough for WAP-technology. The power amplifier module family CGM20GtriB and CGM20G also complete Infineon's wireless dual-band-system solution for GSM mobile phones and is the first member of a new power amplifier module product family. Availability Infineon offers all three different GaAs technologies, i.e. MESFET See FET. , PHEMT See FET. (Pseudomorphic High Electron Mobility Transitor) and InGaP-HBT (Heterojunction Bipolar Transistor The heterojunction bipolar transistor (HBT) is an improvement of the bipolar junction transistor (BJT) that can handle signals of very high frequencies up to several hundred GHz. It is common in modern ultrafast circuits, mostly radio-frequency (RF) systems. ). All GaAs products are based on these technologies and are manufactured in Munich, Germany in the new 6 inch GaAs wafer fab facility. High volume shipments are guaranteed. The new CGM20GTriB is available in volume mid of 2001, samples are available now. About Infineon Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for applications in the wired and wireless communications markets, for security systems and smartcards, for the automotive and industrial sectors, as well as memory products. With a global presence, Infineon operates in the United States from San Jose, Calif., in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal year 2000 (ending September), the company achieved sales of Euro 7.28 billion with about 29,000 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange Frankfurt Stock Exchange The largest of Germany's eight securities exchanges, operated by Deutsche Borse AS. and on the New York Stock Exchange New York Stock Exchange (NYSE) World's largest marketplace for securities. The exchange began as an informal meeting of 24 men in 1792 on what is now Wall Street in New York City. (ticker symbol:IFX). Further information is available at www.infineon.com. This press release and a press photo are available online at http://www.infineon.com/news. |
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