Infineon Technologies Introduces Innovative TrenchStop and FieldStop Technology in New Generation of Fast IGBTs; Enables Energy Efficiency.Business Editors/High-Tech Writers PCIM PCIM Policy Core Information Model (IPSec) PCIM Power Conversion and Intelligent Motion (International Conference on Power Control) Europe 2002 MUNICH, NUREMBERG, Germany--(BUSINESS WIRE)--May 14, 2002 Infineon Technologies For the raceway, see . Infineon Technologies AG (ISIN: DE0006231004, FWB: IFX, NYSE: IFX) was founded in April 1999 when the semiconductor operations of parent company, Siemens AG, were spun off to form a separate legal entity. , a leading manufacturer of power semiconductors, announced a new generation of its IGBT IGBT Insulated Gate Bipolar Transistor IGBT Integrated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor) product family at the PCIM Europe 2002 show. The new IGBT products are for the 1200V voltage range and combine TrenchStop and FieldStop technology. In contrast to standard Non-Punch-Through (NPT NPT National Pipe Taper (pipe thread specification) NPT Non-Proliferation Treaty NPT Nonprofit Times NPT Newport (Rhode Island) NPT Nuclear Nonproliferation Treaty NPT Neath Port Talbot ) IGBTs, these new IGBTs reduce conduction losses by up to 40 percent while exhibiting the same low switching losses. Optimized for switching frequencies up to 10kHz in "hard-switching" or up to 30kHz in "resonant switching" topologies, the products are ideally suited for use in industrial motor drives of all kinds, as well as in frequency converters, robot controllers and uninterruptible power supplies. Technical details of the 1200V IGBT family IGBT power switches cause both conduction losses and switching losses. With standard NPT IGBTs, only the conduction losses or only the switching losses can be minimized, in each case at the expense of the other parameter. Infineon's unique 1200V IGBTs in TrenchStop technology enables reduced conduction losses up to 40 percent (at V(CEsat) typ.1.7 V; V(GE) = 15 V; I(C) = 15 A; T(j)=25 degrees C), while switching losses remain as low as before. The FieldStop structure within the power semiconductor ensures a significant reduction in the tail current that occurs during high-speed switching, and at the same time, the TrenchStop cell limits conduction losses to a minimum due to the extremely low saturation voltage. As a result, considerably less heat is generated, and consequently, the cooling requirement is reduced, ultimately leading to a lower system cost. The advantages of Infineon's new TrenchStop technology family include the customary exceptional ruggedness and short-circuit withstand capability, increased reliability, and low electromagnetic interference See EMI. (EMI (ElectroMagnetic Interference) An electrical disturbance in a system due to natural phenomena, low-frequency waves from electromechanical devices or high-frequency waves (RFI) from chips and other electronic devices. Allowable limits are governed by the FCC. ). The 1200V IGBTs therefore enable the development of innovative concepts for a more compact system design for electrical drives. As with NPT IGBTs, the conductivity state voltage exhibits a positive temperature coefficient Positive Temperature Coefficient (PTC) refers to materials that experience an increase in electrical resistance when their temperature is raised. Materials which have useful engineering applications usually show a relatively rapid increase with temperature, i.e. , permitting the parallel connection of multiple TrenchStop IGBTs. Infineon's new family of 1200V TrenchStop IGBTs in the advanced TO247 package currently comprises five single versions for output currents from 8A to 55A (T(c) = +100 degrees C) or 16A to 100A (T(c) = +25 degrees C), plus four versions in the DuoPack package for output currents from 8A to 40A (T(c) = +100 degrees C) or 16A to 80A (T(c) = +25 degrees C). The DuoPack, which includes the anti-parallel EmCon (Emitter Controlled) diode with a TrenchStop IGBT device, enables exceptionally low-cost solutions in applications requiring a reverse diode. Infineon expects to introduce a further 600V version of the TrenchStop IGBTs before the end of 2003. Availability and Pricing All versions of the 1200V TrenchStop IGBTs are available in volume quantities. In quantities of one thousand units, the price per unit is less than 2.50 US dollars for 15A single versions in the TO247 package, and less than 3.00 US dollars for 15A DuoPack versions in the TO247 package. As the technology leader, Infineon thus offers a comprehensive product portfolio of power semiconductors for power supply systems, ranging from standard IGBTs, through 600V and 1200V fast and high-speed IGBTs in NPT technology, to the new TrenchStop IGBTs. They are available in a number of package variants. Infineon Technologies will present the new power semiconductors at PCIM 2002 show (May 14-16, 2002, Nuremberg, Germany) in Hall 12, booth 103. Further information on Infineon's IGBT products is available at www.infineon.com/igbt About Infineon Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for applications in the wired and wireless communications markets, for security systems and smartcards, for the automotive and industrial sectors, as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal year 2001 (ending September), the company achieved sales of Euro 5.67 billion with about 33,800 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange Frankfurt Stock Exchange The largest of Germany's eight securities exchanges, operated by Deutsche Borse AS. and on the New York Stock Exchange New York Stock Exchange (NYSE) World's largest marketplace for securities. The exchange began as an informal meeting of 24 men in 1792 on what is now Wall Street in New York City. (ticker symbol Ticker Symbol An arrangement of characters (usually letters) representing a particular security listed on an exchange or otherwise traded publicly. When a company issues securities to the public marketplace, it selects an available ticker symbol for its securities which investors :IFX IFX - ["Type Reconstruction with First-Class Polymorphic Values", J. O'Toole et al, SIGPLAN Notices 24(7):207-217 (Jul 1989)]. ). Further information is available at www.infineon.com This news release and a press photo are available online at www.infineon.com/news Note to Editors: Infineon Technologies North America Corp. All rights reserved. Infineon and the stylized styl·ize tr.v. styl·ized, styl·iz·ing, styl·iz·es 1. To restrict or make conform to a particular style. 2. To represent conventionally; conventionalize. Infineon Technologies design are registered trademarks and service marks of Infineon Technologies AG. Other product and brand names may be trademarks or registered trademarks of their respective owners. For the Trade Press: INFAI INFAI Institut für biomedizinische Analytik und. NMR-Imaging GmbH 200205.085e |
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