Infineon Technologies Announces Second Generation CoolMOS C2 Family With Lowest Resistance and Fastest Switching for Power Conversion Systems.

Business Editors/High-Tech Writers

PCIM 2000

MUNICH/NUREMBERG, Germany--(BUSINESS WIRE)--June 6, 2000

Infineon Technologies AG (FSE/NYSE:IFX), a leading supplier of power semiconductors, today announced its second generation CoolMOS(TM) C2 power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) family.

The CoolMOS first generation offered a major reduction in conduction losses. The second generation, CoolMOS C2, retains the major "On" resistance reduction and adds a major reduction in switching losses.

The CoolMOS C2 state-of-the-art technology is the next step in Infineon's strategy to pursue "silicon instead of heat sinks." The challenge for all new generations of power supply equipment is to increase power density, achieve miniaturization, and obtain greater system integration. CoolMOS C2 enables these developments.

"The C2 product family will enable our customers to design low cost system solutions, paving the way for use in a wider range of potential applications," said Erich Wallner, senior vice president and general manager of the Automotive & Industrial Division at Infineon Technologies. "With a comprehensive range of current and voltage values, the new CoolMOS family offers technology that can be applied to many new fields of applications as well as offering a cost-effective replacement option for existing applications."

CoolMOS is a revolutionary Metal Oxide Semiconductor (MOS) technology developed by Infineon Technologies that allows a reduction of R(DS)(on) values by a factor of between five and ten for the same chip area when compared to existing processes. The incorporation of vertical p-strips into the drift zone reduces the reverse voltage both in the vertical and horizontal directions, unlike the previous CoolMOS generation that only addressed the horizontal direction. This 3D-folded structure allows a reduction in film thickness and substantial increase in the doping of the drift zone. To meet the demand of low switching times, CoolMOS C2 also features a new gate structure with additional gate fingers and a gate ring.

Price and Availability

The 600 V family CoolMOS C2 transistors are available in production quantities now, and SPP20N60C2 unit price is $2.83 in 1,000-unit quantities. The 800 V family CoolMOS C2 transistors are available in sample quantities, with pricing for SPP17N80C2 expected to be $3.25 per unit in 1,000-unit quantities when production quantities become available.

The product family includes a complete range of 600V transistors in all industry standard packages and 800V versions with best-of-class R(DS)(on) in surface mount D-PAK and D2PAK, and thru hole TO220 packages.

For additional information about Infineon's Power MOSFET product portfolio, please visit the following URL: http://www.infineon.com/coolmos.

About Infineon

Infineon Technologies AG, Munich, Germany, offers semiconductor solutions for applications in the wireless and wired communications markets, for the automotive and industrial sectors, for security systems and chip cards as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, and in the Asia-Pacific region from Singapore. In the fiscal year 1999 (ending September), the company achieved sales of Euro 4.24 billion (US $4.51 billion) with about 26,000 employees worldwide. The company is listed on the main market segment (Amtlicher Handel) of the Frankfurt Stock Exchange and at the New York Stock Exchange (FSE/NYSE: IFX). Further information is available at www.infineon.com

Any statements in this document that are not historical facts are forward-looking statements that involve risks and uncertainties; actual results may differ from the forward-looking statements. Infineon Technologies undertakes no obligation to publicly release the results of any revisions to these forward-looking statements that may be made to reflect events or circumstances after the date hereof or to reflect the occurrence of unanticipated events.

Note: The "DS" and "(on)" in the term "R(DS)(on)" above should be subscript.

Note to Editors: Infineon, the stylized Infineon Technologies design are trademarks of Infineon Technologies AG. All other trademarks are the property of their respective owners.