Industry's First 4-Megabit Nonvolatile FRAM Memory.New parallel FRAM (1) (Ferroelectric RAM) See FeRAM. (2) (Ferromagnetic RAM) A non-volatile memory that records microscopic bits on a magnetic surface. See MRAM. FRAM - Ferroelectric Random Access Memory device combines Texas Instruments' proven 130 nanometer process with Ramtron's advanced FRAM cell architecture COLORADO SPRINGS, Colo. -- Ramtron International Corporation (Nasdaq: RMTR RMTR Redesigned Missile Tracking Radar ), a leading developer and supplier of nonvolatile ferroelectric random access memory (storage) Ferroelectric Random Access Memory - (FRAM) A type of non-volatile read/write random access semiconductor memory. FRAM combines the advantages of SRAM - writing is roughly as fast as reading, and EPROM - non-volatility and in-circuit programmability. (FRAM) and integrated semiconductor products, today launched the semiconductor industry's first 4-megabit (Mb) FRAM memory - the highest-density FRAM product available. The FM22L16 is a 4Mb, 3-volt, parallel nonvolatile RAM in a 44-pin thin small outline plastic (TSOP (Thin Small Outline Package) A very thin, plastic, rectangular surface mount chip package with gull-wing pins on its two short sides. TSOPs are about a third as thick as SOJ chips. See gull-wing lead, SOP, SOJ and chip package. ) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous Refers to events that are not synchronized, or coordinated, in time. The following are considered asynchronous operations. The interval between transmitting A and B is not the same as between B and C. The ability to initiate a transmission at either end. static RAM (SRAM See static RAM. SRAM - static random-access memory ), the FM22L16 targets industrial control systems such as robotics, network and data storage applications, multi-function printers, auto navigation systems and a host of other SRAM-based system designs. "The 4Mb FRAM breaks new technological ground that will carry Ramtron and FRAM into new and innovative applications," explains Ramtron Vice President Mike Alwais. "The FM22L16 moves FRAM technology onto a mainstream and proven process node from TI that offers many new stand-alone and integrated product opportunities. This introduction positions FRAM as an ideal nonvolatile memory solution with potential to alter the memory landscape." Product Features The FM22L16 is organized as a 256K x 16 nonvolatile memory, accessed with an industry standard parallel interface. Access time is 55ns and cycle time is 110ns. The device reads and writes at bus speed for NoDelay[TM] writes with endurance of at least 1e14 (100-trillion) writes and 10-year data retention. This 4Mb FRAM is a drop-in replacement for standard asynchronous SRAMs, but far superior as it does not require a battery for data backup and is inherently more reliable due to its monolithic form. The FM22L16 is a true surface-mount solution, requiring no rework steps for battery attachment and, unlike SRAM, is highly resistant to moisture, shock and vibration. With a convenient interface to current high-performance microprocessors, the FM22L16 features a high-speed page mode that enables 4-byte burst read/write operations at up to 40MHz (MegaHertZ) One million cycles per second. It is used to measure the transmission speed of electronic devices, including channels, buses and the computer's internal clock. A one-megahertz clock (1 MHz) means some number of bits (16, 32, 64, etc. , a bus speed significantly higher than conventional RAM. The device boasts a lower operating current than standard SRAMs, drawing 18 milliamps for reads/writes and an ultra low current sleep mode of 5 microamps. It operates from 2.7 to 3.6 volts over the industrial temperature range (-40 degrees C to +85 degrees C). Visit http://www.ramtron.com/4MbFRAM for more product details. About TI's Advanced 130 Nanometer (nm) Process for FRAM The FM22L16 is based on TI's proven, advanced 130nm CMOS (Complementary Metal Oxide Semiconductor) Pronounced "c-moss." The most widely used integrated circuit design. It is found in almost every electronic product from handheld devices to mainframes. manufacturing process. Only two additional mask steps have been used to embed the non-volatile FRAM module within the standard CMOS 130nm logic process. TI and Ramtron detailed their commercial manufacturing arrangement and disclosed further details of TI's 130nm process for Ramtron's FRAM products in a separate press release today. Pricing and Availability Engineering samples of the FM22L16 are available now. Limited volumes of the FM22L16 are planned for the third quarter of 2007, with full volume production slated for the fourth quarter. The device is available in a 44-pin TSOP-II package that is RoHS-compatible. Pricing starts at $19 for quantities of 10,000 units. About Ramtron Ramtron International Corporation, headquartered in Colorado Springs, Colorado The City of Colorado Springs is the second most populous city (after Denver) in the state of Colorado and the 48th most populous city in the United States.[4] The city is the county seat of El Paso County. , is a fabless semiconductor company A fabless semiconductor company specializes in the design and sale of hardware devices implemented on semiconductor chips. It achieves an advantage by outsourcing the fabrication of the devices to a specialized semiconductor manufacturer called a semiconductor foundry or "fab. that designs, develops and markets specialized semiconductor memory and integrated semiconductor solutions used in a wide range of product applications and markets worldwide. For more information, visit www.ramtron.com. "Safe Harbor Safe Harbor 1. A legal provision to reduce or eliminate liability as long as good faith is demonstrated. 2. A form of shark repellent implemented by a target company acquiring a business that is so poorly regulated that the target itself is less attractive. " Statement under the Private Securities Litigation Reform Act The Private Securities Litigation Reform Act of 1995 (PSLRA) implemented several significant substantive changes affecting certain cases brought under the federal securities laws, including changes related to pleading, discovery, liability, class representation and awards fees and of 1995: Statements herein that are not historical facts are "forward-looking statements" involving risks and uncertainties, including but not limited to: the effect of global economic conditions, shifts in supply and demand, market acceptance, the rate at which design-ins result in actual customer orders and sales, the impact of competitive products and pricing, product development, commercialization and technological difficulties, and capacity and supply constraints. Please refer to Ramtron's Securities and Exchange Commission filings for a discussion of such risks. For a 300-dpi product photo, visit www.ramtron.com/doc/Press/Images.asp. |
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