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IXYS Offers 1kV/30A Q3 HiPerFETTM Power MOSFET in Surface Mount Lightweight Package.

MILPITAS, Calif. & BIEL Biel (bēl) or Bienne (byĕn), city (1990 est. pop. 52,020), Bern canton, NW Switzerland, at the northeast end of the Lake of Biel. A watchmaking center, Biel also manufactures chains and machinery. , Switzerland -- IXYS Corporation (NASDAQ NASDAQ
 in full National Association of Securities Dealers Automated Quotations

U.S. market for over-the-counter securities. Established in 1971 by the National Association of Securities Dealers (NASD), NASDAQ is an automated quotation system that reports on
: IXYS), a leader in power semiconductors and ICs for energy efficiency, power management, and motor control applications, today announced the availability of its Q3 HiPerFET(TM) Power MOSFET in a Surface Mount package called SMPD SMPD Santa Monica Police Department (Santa Monica, California)
SMPD Single Module Photo Detector
SMPD Surface Missile Processing Description
, the MMIX1F44N100Q3. Available with a blocking voltage of 1kV and current rating of 30A, the device can be easily surface-mounted on a printed circuit board (PCB) using a standard pick-and-place and reflow soldering process. No costly screws, cables, bus-bars or hand soldered contacts are needed. Weighing only 8g, it is much lighter (typically by 50%) than comparable conventional power modules, thereby enabling lower weight power systems for the IXYS customers. This is one of the key "Green" initiatives of IXYS Corporation in developing new products for the Cleantech industry that are lighter in weight.

Due to its new compact and high performance SMPD package, the MMIX1F44N100Q3 MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged  exhibits a low package inductance and high current handling capability. A ceramic isolation of 2.5kV is achieved with the DCB DCB Dichlorobenzene
DCB David Crowder Band
DCB Dictionary of Canadian Biography
DCB Device Control Block
DCB Double Cantilever Beam
DCB Disk Coprocessor Board
DCB Dependent Care Benefits
DCB Data Control Block
DCB Direct Copper Bonding
 substrate technology --- an electrically isolated tab is provided for heat sinking.

"This unique device is part of our initiative of taking power systems on a diet, literally, with the aim of reducing the weight of the power semiconductors in a typical power system. Weight reduction is a key effort in reducing greenhouse gas emissions in the production, shipment and use of power products," commented Dr. Nathan Zommer, Founder and CEO (1) (Chief Executive Officer) The highest individual in command of an organization. Typically the president of the company, the CEO reports to the Chairman of the Board.  of IXYS Corporation. "Our lighter products use less material, require less energy to ship, and result in lower weight products for our customers, a critical desired feature in a lot of applications, including portable equipment, and for the automotive and transportation industry."

The Q3-Class is a direct result of combining the latest PolarHV[TM] technology platform with advanced double metal construction, resulting in an optimal combination of low on-state resistance and gate charge. Additionally the device has a low gate-to-drain (Miller) charge and low intrinsic gate resistance. These enhancements lower gate drive requirements and switching losses.

Additionally, the power switching capability and ruggedness of the device are further enhanced by the proven HiPerFET(TM) process, yielding a power MOSFET with a fast intrinsic rectifier. The result is a low reverse recovery charge, an ability to sustain hard-switching operations and an excellent rate of rise of the drain-source voltage (up to 50 Volts per nanosecond (1) One billionth of a second. Used to measure the speed of logic and memory chips, a nanosecond can be visualized by converting it to distance. In one nanosecond, electricity travels approximately a foot in a wire. ). These featured diode properties translate into a faster transient response, an increase in power efficiency and higher operating frequencies. Other beneficial product features include a low junction-to-case thermal resistance of 0.18 degree Celsius per Watt and high avalanche energy rating of 4 Joules. The high avalanche energy rating enables operation at higher voltage ratings without snubbers or other protection devices. It can absorb transients and thus enhance the reliability of the designed system.

In addition to other applications, the new Power MOSFET is well suited for DC-DC converters, inverters, battery chargers, switch-mode and resonant power supplies, motor drives, E-bikes, and electric and hybrid vehicles (EVs and HEVs). In particular, the enhanced dv/dt rating and high avalanche energy capability mean additional safety margins for stresses encountered in high voltage industrial switching applications, thus improving the long-term reliability of these systems.

Additional product information may be obtained by visiting IXYS' website at http://www.ixys.com or by contacting the company directly.

About IXYS Corporation

IXYS Corporation makes and markets technology-driven products to improve power conversion efficiency, generate solar and wind power, and provide efficient motor control for industrial applications. IXYS offers a diversified product base that addresses worldwide needs for power control, electrical efficiency, renewable energy, telecommunications, medical devices, electronic displays, and RF power.

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 Statement

Any statements contained in this press release that are not statements of historical fact, including the performance, rating, benefits, reliability, availability and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Annual Report on Form 10-Q for the fiscal quarter ended June 30, 2012. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.
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Publication:Business Wire
Geographic Code:1U9CA
Date:Aug 30, 2012
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