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IXYS Introduces Best in Class New 400A/1200V IGBT Module; Expanding the Power and Ruggedness of its IGBT Module Family.

Business Editors/High-Tech Writers

SANTA CLARA, Calif.--(BUSINESS WIRE)--May 23, 2002

IXYS Corporation (Nasdaq:SYXI), a leader in power semiconductors for power conversion and motion control applications, announces today the introduction of its new dual 400A/1200V IGBT module. This family of devices expands the high current range of the present IXYS IGBT based power module products, addressing the higher value added segment of the power control market. The new MII 400-12E4 Dual Pack IGBT module is rated at 1200 volts and current of 420 amperes, and is available in phase-leg (half-bridge) topology. Using its 3rd generation Non-Punch-Through (NPT3) IGBT chips, the module features a 20% reduction in saturation voltage along with a 20% reduction in switching losses and rugged IGBT performance. The associated fast recovery diodes are fabricated utilizing its HiPerFRED(TM) technology that provides excellent fast recovery with soft characteristics, and low operating forward voltage losses.

This integration in one module of leading edge IGBT/Diode designs, mounted on IXYS' own proprietary DCB substrates, offers the user excellent all round electrical and thermal performance, maximizing the energy efficiency in power conversion and motor control circuits. These modules are part of IXYS' "Best In its Class" product family, for highest efficiency in integrated power control.

The design and features of this new IGBT module have been driven by and developed for high power inverters for such applications as AC and DC motor drives, motor drives for electric vehicles and mass transit systems, electric welding, and high power UPS's.

Pricing for the MII 400-12E8 start at $175 in 100 piece quantities. Prototyping quantities are available from stock and lead times for production quantities run 8-12 weeks.

IXYS Corporation offers a broad line of Power Semiconductors, including Power MOSFETs, IGBTs, RF Power MOSFETs, Ultra-fast Reverse Recovery Diodes, silicon and gallium arsenide Schottky diodes, GTO's, thyristors and rectifiers, Multi-chip Modules, DCB ceramic substrates and Power Interface Integrated Circuits. IXYS offers a variety of Power Pulse products and RF MOSFETs via DEI, its Colorado Company, and higher power semiconductors via Westcode its U.K. based Company.

For further information, contact your local authorized IXYS distributor or sales representative or IXYS Corporation at Tel: 408-982-0700, Fax 408-496-0670 or through the World Wide Web (www.ixys.net).

Statements in this press release regarding IXYS' business that are not historical facts are "forward-looking statements" that involve risks and uncertainties, including, but not limited to demand for the Company's products, the ability of the company to develop, manufacture, and market new products, demand by end-users for the products produced by the Company's customers, and the other risks detailed from time to time in the Company's reports filed with the Securities and Exchange Commission.
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Publication:Business Wire
Date:May 23, 2002
Words:447
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