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IR Trench IGBTs Reduce Power Dissipation Up to 60% in Motion Control Applications.


EL SEGUNDO, Calif. -- International Rectifier, IR(r) (NYSE NYSE

See: New York Stock Exchange
:IRF IRF Interferon Regulatory Factor
IRF International Religious Freedom
IRF Institut for Rationel Farmakoterapi (German)
IRF Inherited Rights Filter (Novell)
IRF Inherited Rights Filter
), a world leader in power management technology, today introduced four 600V insulated gate bipolar transistors (IGBTs) that can reduce power dissipation in inverters by up to 60%, in motor control applications up to 2.5kW.

Co-packaged with ultrafast soft recovery diodes, these IGBTs have lower collector-to-emitter saturation voltage and total switching energy than punch-through (PT) and non-punch-through (NPT NPT National Pipe Taper (pipe thread specification)
NPT Non-Proliferation Treaty
NPT Nonprofit Times
NPT Newport (Rhode Island)
NPT Nuclear Nonproliferation Treaty
NPT Neath Port Talbot
) type IGBTs. The combination of low collector-to-emitter saturation voltage and total switching energy of trench IGBTs results in reduced power dissipation and higher power density in motion control applications with wide range of switching frequency conditions such as in air conditioner and refrigerator compressors, vacuum cleaners, washing machines, dishwashers, ventilation fans, industrial drives and circulating pumps.

The trench IGBTs, part of IR's iMOTION(tm) integrated design platform, increase current density and can deliver up to 60% higher rms current in the same package compared to previous devices on the market. The reduced power dissipation IGBT IGBT Insulated Gate Bipolar Transistor
IGBT Integrated Gate Bipolar Transistor
 can result in a 50% heatsink size reduction.

Other performance benefits include wider square reverse bias safe operating area For power semiconductor device (such as BJT, MOSFET, thyristor or IGBT) a safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage.  (RBSOA RBSOA Reverse Biased Safe Operating Area (electronics) ), up to 175 degrees Celsius maximum operating temperature, high peak turn-off capability, positive collector-to-emitter saturation voltage temperature coefficient and short-circuit rating of 5 micro-seconds and high dV/dt induced turn-on immunity. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.

Data sheets and application notes for the IRGB IRGB Intensity Rgb 4056DPbF, IIRGB4061DPbF, IRGB4062DPbF and the IRGP IRGP Intramural Research Grant Program
IRGP Infrared Guided Projectile
4062DPbF are available on the International Rectifier Web site: http://www/irf.com/whats-new/nr060413.html

Availability and Pricing

The new IGBT discrete devices are available now. Pricing is as follows, in US dollars and 1,000-quantity: IRGB4056DPbF, $1; IIRGB4061DPbF, $1.28; IRGB4062DPbF, $1.65; IRGP4062DPbF, $1.95. Prices are subject to change. The IGBTs are lead-free and RoHS compliant.

About International Rectifier

International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR's power management benchmarks to power their next generation products. For more information, go to www.irf.com.

Trademark Notice

IR(r) and iMOTION(tm) are trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.
COPYRIGHT 2006 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2006, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Date:Apr 13, 2006
Words:404
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