IR's New DirectFET(R) MOSFET Chipset Achieves Lowest On-State Resistance for 25V Applications.EL SEGUNDO, Calif. -- International Rectifier, IR([R]) (NYSE NYSE See: New York Stock Exchange : IRF IRF Interferon Regulatory Factor IRF International Religious Freedom IRF Institut for Rationel Farmakoterapi (German) IRF Inherited Rights Filter (Novell) IRF Inherited Rights Filter ), a world leader in power management technology, today introduced a new DirectFET[R] MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged chipset for high-current DC-DC DC-DC Direct Current to Direct Current (power conversion) converters used in notebook, high-end desktops and servers, and advanced telecom and datacom systems. "Developed using the latest HEXFET HEXFET Hexagonal Field Effect Transistor [R] MOSFET silicon technology and IR's benchmark DirectFET packaging technology, the IRF6712S control FET FET: see transistor. (Field Effect Transistor) One of two major categories of transistor; the other is bipolar. FETs use a gate element that, when charged, creates an electromagnetic field that changes the conductivity of a silicon and IRF6716M sync FET are characterized with extremely low package inductance and device on-state resistance, gate charge and gate-to-drain charge to achieve high efficiency and superior thermal performance," said John Lambert, technical marketing engineer for IR's Discrete Products. "This allows operation up to 25 amperes per phase, in a small, sleek form factor," Lambert added. With low typical RDS (1) (Remote Data Services) A set of programming interfaces from Microsoft that enables users to update data on the Internet or intranets from their ActiveX-enabled browser. (on) of only 1.2 mOhm at 10VGS VGS Videregående Skole (Norwegian school) VGS Virtual Game Station VGS Voodoo Glow Skulls (Ska band) VGS Video Game System VGS Volunteer Gliding School VGS Voltage Gate to Source VGS Velocity Gate Stealer and 2.0 mOhm at 4.5VGS, the IRF6716M MOSFET achieves the lowest on-state resistance for a 25V device, making it well-suited to synchronous rectifier rectifier, component of an electric circuit used to change alternating current to direct current. Rectifiers are made in various forms, all operating on the principle that current passes through them freely in one direction but only slightly or not at all in the sockets for high-frequency, high-current DC-DC converters used in applications that power high-current loads. The IRF6716M features a slim 0.7mm profile and the MX pad outline common to two generations of devices, allowing an easy migration from existing low-voltage DirectFET MOSFETs. Optimized for high-current applications where a single control MOSFET is desired, the IRF6712S achieves a low gate charge (Qg) of 13nC and gate-to-drain charge (Qgd) of 4.4nC combined with low typical on-state resistance of 3.8 mOhm at 10VGS and 6.7 mOhm at 4.5VGS. The IRF6712S also presents a 0.7mm profile and the SQ pad outline common to two generations of control devices, allowing an easy migration from existing low-voltage MOSFETS. Data sheets for the devices are available on IR's website at http://www.irf.com/whats-new/nr070329.html. Patented DirectFET Packaging Technology International Rectifier's patented DirectFET MOSFET packages present a whole new set of design advantages not previously delivered by standard plastic discrete packages. Their metal can construction enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC-DC buck converters powering advanced microprocessors. In addition, devices in the DirectFET package are compliant with the Restriction of Hazardous Substances Directive The Directive on the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment 2002/95/EC[1] (commonly referred to as the Restriction of Hazardous Substances Directive or RoHS (RoHS). Availability and Pricing Pricing for the IRF6716M is US$ 1.27 each in 10,000-unit quantities and US$ 0.59 for the IRF6712S each in 10,000-unit quantities. Production orders are available immediately. Prices are subject to change. About International Rectifier International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR's power management benchmarks to power their next generation products. For more information, go to www.irf.com. Patent and Trademark Notice DirectFET([R]), HEXFET([R]), and IR([R]) are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders. |
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