Hitachi High-Technologies Develops Leading Edge High-k/Metal Gate Etch Processes for Flash and Logic Chips.

DALLAS -- Hitachi High-Technologies America, Ltd. today announced that it is working with multiple leading integrated device manufacturers (IDMs) to develop new high-k gate dielectric and metal gate etch processes for memory and logic devices. This materials and device characterization work acknowledges the industry's need for high-k and metal gate materials in advanced processing and targets front end of line transistor improvements at the hp65nm process and below.

"Increasingly IDM customers are recognizing revenue losses associated with being late to market with a specific new process or material, especially with regard to advanced gate structures," stated Jim Manos, senior manager, Technology & Business Development of Hitachi High-Technologies America. "This realization is driving formalized efforts to develop and qualify new materials for very advanced processing nodes. Hitachi High-Technologies America is an ideal partner for this development since its new XT etch chamber reduces process complexity by offering a single-chamber room temperature etch solution for these advanced high-k and metal gate materials. The Hitachi XT chamber provides IDMs with a clear advantage that can accelerate the development cycle as it decreases the number of variables required to integrate new materials into the process stream."

Hitachi High-Technologies America has seen a high level of customer activity for evaluating new materials in anticipation of high-k dielectrics and new gate metals entering the manufacturing mainstream for flash and logic applications. The International Technology Roadmap for Semiconductors (ITRS) currently forecasts the need for these materials entering mainstream manufacturing in the 2007-2008 timeframe. HTA is currently qualifying high-k and metal gate processes for both 200 and 300 mm wafer sizes.

The benefit of using high-k gate dielectrics for flash memory is it enables an increased gate coupling ratio thus allowing increased packing densities. Hitachi High-Technologies America's development work in advanced metal gate etch applications primarily focuses on high speed logic below the hp90nm process node, which is anticipated to move into volume production later this year. Most development work is focused on the selection of appropriate work function metals that are compatible with gate integration schemes thus allowing P and N-channel threshold voltage tuning.

In both high-k dielectric and metal gate etch, Hitachi is having great success etching these materials with no chamber wall residue to cause defects. Hitachi's XT etch chamber is proving an ideal platform for high-k and metal etch as it is able to perform low-pressure, room temperature etch, which is particularly effective in avoiding time-dependent dielectric breakdown (TDDB). It offers in-situ, single chamber processing, and ECR (Electron Cyclotron Resonance) position movement in the vertical direction that provides an efficient method to effectively clean the chamber walls prolonging the need for wet cleans. Moving forward, Hitachi will be looking to develop both mid- and high-temperature electrodes for use with future high-k materials.

About Hitachi, Ltd.

Hitachi, Ltd., (NYSE:HIT) (TOKYO:6501), headquartered in Tokyo, Japan, is a leading global electronics company with approximately 356,000 employees worldwide. Fiscal 2005 (ended March 31, 2006) consolidated sales totaled 9,464 billion yen ($80.9 billion). The company offers a wide range of systems, products and services in market sectors including information systems, electronic devices, power and industrial systems, consumer products, materials and financial services. For more information on Hitachi, please visit the company's website at http://www.hitachi.com.